MJL21196G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJL21196G
Código: MJL21196
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Capacitancia de salida (Cc): 500 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO264
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MJL21196G datasheet
..1. Size:123K onsemi
mjl21196g.pdf 
MJL21195, MJL21196 Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http //onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 A COMPLEMENTARY Excellent Gain Linearity
..2. Size:386K cn evvo
mjl21196g.pdf
MJL21196 Transistor Silicon NPN Triple Diffused Type MJL21196 Power Amplifier Applications Complementary to MJL21195 High collector voltage VCEO=250V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature,
6.1. Size:129K onsemi
mjl21195 mjl21196.pdf
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 A COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linearity
6.2. Size:228K inchange semiconductor
mjl21196.pdf
isc Silicon NPN Power Transistor MJL21196 DESCRIPTION Excellent Safe Operating Area DC Current Gain h = 20-80@I = 8A,V = 5V FE C CE Collector-Emitter Saturation Voltage- V )= 1.4V(Max)@ I = 8A CE(sat C Complement to the PNP MJ21195 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output, di
7.1. Size:159K motorola
mjl21193 mjl21194.pdf
Order this document MOTOROLA by MJL21193/D SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN Silicon Power Transistors * MJL21194 The MJL21193 and MJL21194 utilize Perforated Emitter technology and are *Motorola Preferred Device specifically designed for high power audio output, disk head positioners and linear applications. 16 AMPERE COMPLEMENTARY Total Harmonic Distortion Char
7.2. Size:116K onsemi
mjl21193 mjl21194.pdf
MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea
7.3. Size:123K onsemi
mjl21195g.pdf
MJL21195, MJL21196 Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http //onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 A COMPLEMENTARY Excellent Gain Linearity
7.4. Size:120K onsemi
mjl21194g.pdf
MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea
7.5. Size:120K onsemi
mjl21193g.pdf
MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Linea
7.6. Size:1309K jilin sino
mjl21194 mjl21193.pdf
Complementary NPN-PNP Power Bipolar Transistor R MJL21194(NPN) MJL21193(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =250V (min) High collector voltage V =250V (min) CEO CEO NPN-PNP Complementary NPN-P
7.7. Size:386K cn evvo
mjl21195g.pdf
MJL21195 Transistor Silicon PNP Epitaxial Type MJL21195 Power Amplifier Applications Complementary to MJL21196 High collector voltage VCEO=-250V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.)
7.8. Size:425K cn sptech
mjl21194.pdf
SPTECH Product Specification SPTECH NPN Power Transistors MJL21194 DESCRIPTION With TO-3PL package Complement to type MJL21193 Excellent gain linearity APPLICATIONS Designed for high power audio output,disk head positioners and linear applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 E
7.9. Size:173K cn sptech
mjl21193.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJL21193 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21194 APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL
7.10. Size:216K inchange semiconductor
mjl21194.pdf
isc Silicon NPN Power Transistor MJL21194 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= 250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21193 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear app
7.11. Size:247K inchange semiconductor
mjl21195.pdf
Silicon PNP Power Transistor MJL21195 DESCRIPTION Excellent Safe Operating Area DC Current Gain h = 20-80@I = -8A,V = -5V FE C CE Collector-Emitter Saturation Voltage- V )= -1.0 V(Max)@ I = -8A CE(sat C Complement to the NPN MJ21196 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output, d
7.12. Size:216K inchange semiconductor
mjl21193.pdf
isc Silicon PNP Power Transistor MJL21193 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250V(Min) High DC Current Gain hFE = 25 Min @ IC = 8 Adc Complement to Type MJL21194 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk head positioners linear ap
Otros transistores... MJH16012, MJH16018, MJH6284G, MJH6287G, MJL1302AG, MJL21193G, MJL21194G, MJL21195G, TIP3055, MJL3281AG, MJL4281AG, MJL4302AG, MJW1302AG, MJW21191, MJW21192, MJW21193G, MJW21194G
