MJW21195G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJW21195G
   Código: MJW21195
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 500 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO247

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MJW21195G Datasheet (PDF)

..1. Size:153K onsemi
mjw21195g.pdf

MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell

6.1. Size:157K onsemi
mjw21195 mjw21196.pdf

7.1. Size:150K motorola
mjw21192 mjw21191.pdf

Order this documentMOTOROLAby MJW21192/DSEMICONDUCTOR TECHNICAL DATANPNMJW21192Complementary Silicon PlasticPNPPower TransistorsMJW21191Specifically designed for power audio output, or high power drivers in audioamplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms8.0 AMPER

7.2. Size:155K onsemi
mjw21192 mjw21191.pdf

MJW21192 (NPN),MJW21191 (PNP)Complementary SiliconPlastic Power TransistorsSpecifically designed for power audio output, or high power driversin audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperaturehttp://onsemi.com All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms8.0 A TO-247AE PackagePOWER TRANSISTORS Pb-Free Packages

7.3. Size:153K onsemi
mjw21196g.pdf

7.4. Size:119K onsemi
mjw21193 mjw21194.pdf

MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion CharacterizedCOMPLEMENTARY SILICON High DC Current GainPOWER TRANSISTORS Excelle

7.5. Size:141K onsemi
mjw21194g.pdf

MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE = 20 Min @ IC = 8 AdcP

7.6. Size:141K onsemi
mjw21193g.pdf

MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE = 20 Min @ IC = 8 AdcP

7.7. Size:111K savantic
mjw21191.pdf

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION With TO-247 package Complement to type MJW21192 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER

7.8. Size:110K savantic
mjw21192.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION With TO-247 package Complement to type MJW21191 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL

7.9. Size:222K inchange semiconductor
mjw21191.pdf

isc Silicon PNP Power Transistor MJW21191DESCRIPTIONDC Current Gain Specified up to 8.0 Amperesat TemperatureHigh SOA: 20 A, 18 V, 100 msTO3PN PackageComplement to Type MJW21192Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSdesigned for power audio output, or high power driversin audio amplifiers applicationsAB

7.10. Size:220K inchange semiconductor
mjw21194.pdf

isc Silicon NPN Power Transistor MJW21194DESCRIPTIONTotal Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = 8 AdcFEComplement to Type MJW21193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output,disk head positionersand linear applications.ABSOLUTE MAXIMUM

7.11. Size:218K inchange semiconductor
mjw21193.pdf

isc Silicon PNP Power Transistor MJW21193DESCRIPTIONTotal Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = -8 AdcFEComplement to Type MJW21194Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output,disk head positionersand linear applications.ABSOLUTE MAXIMUM

7.12. Size:218K inchange semiconductor
mjw21192.pdf

isc Silicon NPN Power Transistor MJW21192DESCRIPTIONDC Current Gain Specified up to 8.0Amperes at Temperature High DC Current Gain h FE = 5(Min )@ I C = 8 AdcTO3PN PackageComplement to Type MJW21191Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power audio output,or high power driversin audio

Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

Liste

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