MJW21195G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excell

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excell

Order this document MOTOROLA by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic PNP Power Transistors MJW21191 Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA 20 A, 18 V, 100 ms 8.0 AMPER

MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperature http //onsemi.com All On Characteristics at Temperature High SOA 20 A, 18 V, 100 ms 8.0 A TO-247AE Package POWER TRANSISTORS Pb-Free Packages

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excell

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized COMPLEMENTARY SILICON High DC Current Gain POWER TRANSISTORS Excelle

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICON hFE = 20 Min @ IC = 8 Adc P

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICON hFE = 20 Min @ IC = 8 Adc P

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION With TO-247 package Complement to type MJW21192 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION With TO-247 package Complement to type MJW21191 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL

isc Silicon PNP Power Transistor MJW21191 DESCRIPTION DC Current Gain Specified up to 8.0 Amperes at Temperature High SOA 20 A, 18 V, 100 ms TO 3PN Package Complement to Type MJW21192 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS designed for power audio output, or high power drivers in audio amplifiers applications AB

isc Silicon NPN Power Transistor MJW21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = 8 Adc FE Complement to Type MJW21193 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output,disk head positioners and linear applications. ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor MJW21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = -8 Adc FE Complement to Type MJW21194 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output,disk head positioners and linear applications. ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor MJW21192 DESCRIPTION DC Current Gain Specified up to 8.0 Amperes at Temperature High DC Current Gain h FE = 5(Min )@ I C = 8 Adc TO 3PN Package Complement to Type MJW21191 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power audio output,or high power drivers in audio