3CD3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3CD3
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO257
Búsqueda de reemplazo de transistor bipolar 3CD3
3CD3 Datasheet (PDF)
3cd3.pdf
3CD3 PNP A B C D E F G H PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V /Rth 15 IC=0.3A W V(BR)CEO ICE=5mA 30 50 80 110 150 200 250 300 V V(BR)EBO IEB=3mA 3.0 V ICEO VCE=20V 2.0 mA A~E IC=0.5A IB=0.1A VCEsa
zx3cd3s1m832 3s1.pdf
ZX3CD3S1M832MPPS Miniature Package Power Solutions40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKYDIODE COMBINATION DUALSUMMARYPNP Transistor VCEO =-40V; RSAT = 104m ; = -3ACSchottky Diode VR = 40V; VF = 500mV (@1A); IC=1ADESCRIPTIONPackaged in the new innovative 3mm x 2mm MLP this combination dualcomprises an ultra low saturation PNP transistor and a 1A Schottky ba
zx3cd3s1m832.pdf
ZX3CD3S1M832MPPS Miniature Package Power Solutions40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKYDIODE COMBINATION DUALSUMMARYPNP Transistor VCEO =-40V; RSAT = 104m ; = -3ACSchottky Diode VR = 40V; VF = 500mV (@1A); IC=1ADESCRIPTIONPackaged in the new innovative 3mm x 2mm MLP this combination dualcomprises an ultra low saturation PNP transistor and a 1A Schottky ba
3cd32b.pdf
TIP32(3CD32) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP31(3DD31) Features: Complement to TIP31(3DD31). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP32 -40 V -5.
3cd32c.pdf
TIP32(3CD32) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP31(3DD31) Features: Complement to TIP31(3DD31). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP32 -40 V -5.
3cd32.pdf
TIP32(3CD32) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP31(3DD31) Features: Complement to TIP31(3DD31). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP32 -40 V -5.
3cd32a.pdf
TIP32(3CD32) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP31(3DD31) Features: Complement to TIP31(3DD31). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol RatingUnitTIP32 -40 V -5.
3cd3c.pdf
isc Silicon PNP Power Transistors 3CD3CDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB1367
History: 2SB1367
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050