3CG1013T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3CG1013T
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 35 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT89

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3CG1013T Datasheet (PDF)

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3cg1013t.pdf

2SA1013T(3CG1013T) PNP /SILICON PNP TRANSISTOR :,/Purpose: Color TV vert.and class B sound output applications. :,, 2SC2383T(3DG2383T)/Features: High voltage, large continuous collector current capability, Complementary pair with 2SC2383T(3DG2383T). /Absolute maximum rat

7.1. Size:118K china
3cg1013.pdf

3CG1013 PNP PCM TA=25 0.9 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A IEBO VEB=5V 0.5 A VBEsat 1.5 IC=500mA V IB=50mA

8.1. Size:238K lzg
3cg1015.pdf

2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, h ,, 2SC1815(3DG1815) FEFeatures: High voltage and high current, excellent h linearity, low noise, FEcomplementary p

8.2. Size:190K lzg
3cg1018.pdf

2SA1018(3CG1018) PNP /SILICON PNP TRANSISTOR :/Purpose: General amplifier. :, 2SC1473(3DG1473) Features: High V , Complementary pair with 2SC1473(3DG1473). CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -250 V CBO V -200 V CEO V -5.0 V EBO I -7

8.3. Size:243K lzg
3cg1015m.pdf

2SA1015M(3CG1015M) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose amplifier applications, driver stage amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -50 V CBO V -50 V CEO V -5.0 V EBO I -150 mA C I -50 m

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: KRC831U | 2SC1114 | 2N1383GN | 2SD965T

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050