3CG1091 Todos los transistores

 ..1. Size:203K  lzg
 3cg1091.pdf

2SA1091(3CG1091) PNP /SILICON PNP TRANSISTOR , , /Purpose High voltage control, plasma display, nixie tube driver, cathode ray tube brightness control applications. , , /Features High voltage, low saturation voltage, small collector output cap

 9.1. Size:118K  china
 3cg1013.pdf

3CG1013 PNP PCM TA=25 0.9 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A IEBO VEB=5V 0.5 A VBEsat 1.5 IC=500mA V IB=50mA

 9.2. Size:115K  china
 3cg1020.pdf

 9.3. Size:238K  lzg
 3cg1015.pdf

2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. , , h , , 2SC1815(3DG1815) FE Features High voltage and high current, excellent h linearity, low noise, FE complementary p

 9.4. Size:247K  lzg
 3cg1030.pdf

2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR , 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). Features Optimum for high-density mounting. /Absolute Maximum Ratin

 9.5. Size:288K  lzg
 3cg1037ak.pdf

2SA1037AK(3CG1037AK) PNP /SILICON PNP TRANSISTOR /Purpose General amplifier applications. , 2SC2412K(3DG2412K) /Features Excellent h linearity, FE Complementary pair with 2SC2412K(3DG2412K). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V C

 9.6. Size:248K  lzg
 3cg1013t.pdf

2SA1013T(3CG1013T) PNP /SILICON PNP TRANSISTOR , /Purpose Color TV vert.and class B sound output applications. , , 2SC2383T(3DG2383T) /Features High voltage, large continuous collector current capability, Complementary pair with 2SC2383T(3DG2383T). /Absolute maximum rat

 9.7. Size:873K  lzg
 3cg1036k.pdf

 9.8. Size:190K  lzg
 3cg1018.pdf

2SA1018(3CG1018) PNP /SILICON PNP TRANSISTOR /Purpose General amplifier. , 2SC1473(3DG1473) Features High V , Complementary pair with 2SC1473(3DG1473). CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -250 V CBO V -200 V CEO V -5.0 V EBO I -7

 9.9. Size:243K  lzg
 3cg1015m.pdf

2SA1015M(3CG1015M) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose amplifier applications, driver stage amplifier applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -50 V CBO V -50 V CEO V -5.0 V EBO I -150 mA C I -50 m

 9.10. Size:247K  lzg
 3cg1030a.pdf

2SB1030(3CG1030) 2SB1030A(3CG1030A) PNP /SILICON PNP TRANSISTOR , 2SD1423(3DG1423)/2SD1423A(3DG1423A) Purpose Low frequency power amplifier, complementary to 2SD1423(3DG1423)/2SD1423A(3DG1423A). Features Optimum for high-density mounting. /Absolute Maximum Ratin

 9.11. Size:287K  lzg
 3cg1048.pdf

2SA1048(3CG1048) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency amplifier applications. , , , h , , FE 2SC2458(3DG2458) /Features Small package, high voltage, high h , FE excellent h linearity, low noise, Complementary pair wi

 9.12. Size:24K  shaanxi
 3cg102.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG102 PNP Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a