3CG114B Todos los transistores

 

3CG114B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3CG114B

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO18

Búsqueda de reemplazo de transistor bipolar 3CG114B

 

3CG114B Datasheet (PDF)

0.1. 3cg114b.pdf Size:103K _china

3CG114B

3CG114B PNP PCM TA=25 1.0 W ICM 1.0 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VCE=2V

9.1. 3cg110.pdf Size:133K _china

3CG114B

3CG110 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.

9.2. 3cg1124.pdf Size:112K _china

3CG114B

3CG1124 PNP PCM TA=25 500 mW ICM 3 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=10uA 60 V V(BR)CEO ICE=1mA 50 V V(BR)EBO IEB=10uA 6.0 V ICBO VCB=40V 1 A IEBO VEB=4V 1 A VBEsat 1.2 IC=2A V IB=100mA VCEsat 0.7 VCE=2V hFE 100~5

 9.3. 3cg112.pdf Size:132K _china

3CG114B

3CG112 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0

9.4. 3cg111.pdf Size:132K _china

3CG114B

3CG111 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.

 9.5. 3cg1182.pdf Size:219K _lzg

3CG114B
3CG114B

2SB1182(3CG1182) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD1758(3DG1758) Features: Low V complements the 2SD1758(3DG1758). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -32 V

9.6. 3cg1132.pdf Size:381K _lzg

3CG114B
3CG114B

2SB1132(3CG1132) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. , 2SD1664(3DG1664) Features: Low saturation voltage, complements the 2SD1664(3DG1664). /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -40 V

9.7. 3cg1128.pdf Size:218K _lzg

3CG114B
3CG114B

2SA1128(3CG1128) PNP /SILICON PNP TRANSISTOR :/Purpose: Audio frequency output amplifier. :, 2SC1788(3DG1788) Features: low V ,complementary pair with 2SC1788(3DG1788). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -25 V CBO V -20 V CEO

9.8. 3cg1160.pdf Size:239K _lzg

3CG114B
3CG114B

2SA1160(3CG1160) PNP /SILICON PNP TRANSISTOR :, Purpose: Strobe flash,medium power amplifier applications. , Features: High DC current gain and excellent hFE linearity,low saturation voltage. /Absolute maximum ratings(Ta=25)

9.9. 3cg1162.pdf Size:268K _lzg

3CG114B
3CG114B

2SA1162(3CG1162) PNP /SILICON PNP TRANSISTOR :/Purpose:Audio frequency general purpose amplifier applications. :,,,, 2SC2712(3DG2712) Features:High voltage and current,excellent h linearity,high h ,low noise,complementary FE FEto 2SC2712(3

9.10. 3cg1175.pdf Size:415K _lzg

3CG114B
3CG114B

2SA1175(3CG1175) PNP /SILICON PNP TRANSISTOR :/Purpose: Driver stage of audio frequency amplifier. :,, 2SC2785(3DG2785) Features: High voltage and excellent h linearity, complementary pair with 2SC2785(3DG2785). FE/Absolute maximum ratings(Ta=25)

9.11. 3cg1189.pdf Size:262K _lzg

3CG114B
3CG114B

2SB1189(3CG1189) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD1767(3DG1767) Features: Low V complements the 2SD1767(3DG1767). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -80 V CBO V -80 V C

9.12. 3cg1188.pdf Size:292K _lzg

3CG114B
3CG114B

2SB1188(3CG1188) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD1766(3DG1766) Features: Low V complements the 2SD1766(3DG1766). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -32 V C

9.13. 3cg1197k.pdf Size:230K _lzg

3CG114B
3CG114B

2SB1197K(3CG1197K) PNP /SILICON PNP TRANSISTOR : Purpose: Low frequency amplifier applications. :, 2SD1781K(3DG1781K) Features: Low V ,complements the 2SD1781K(3DG1781K). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -32

9.14. 3cg1198k.pdf Size:267K _lzg

3CG114B
3CG114B

2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. :, 2SD1782K(3DG1782K) Features: High breakdown,low V ,complements the 2SD1782K(3DG1782K). CE(sat)/Absolute maximum ratings(Ta=25) Sym

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