3CG1160 Todos los transistores

 ..1. Size:239K  lzg
 3cg1160.pdf

2SA1160(3CG1160) PNP /SILICON PNP TRANSISTOR , Purpose Strobe flash,medium power amplifier applications. , Features High DC current gain and excellent hFE linearity,low saturation voltage. /Absolute maximum ratings(Ta=25 )

 8.1. Size:268K  lzg
 3cg1162.pdf

2SA1162(3CG1162) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency general purpose amplifier applications. , , , , 2SC2712(3DG2712) Features High voltage and current,excellent h linearity,high h ,low noise,complementary FE FE to 2SC2712(3

 9.1. Size:133K  china
 3cg110.pdf

3CG110 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.

 9.2. Size:112K  china
 3cg1124.pdf

3CG1124 PNP PCM TA=25 500 mW ICM 3 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=10uA 60 V V(BR)CEO ICE=1mA 50 V V(BR)EBO IEB=10uA 6.0 V ICBO VCB=40V 1 A IEBO VEB=4V 1 A VBEsat 1.2 IC=2A V IB=100mA VCEsat 0.7 VCE=2V hFE 100 5

 9.3. Size:132K  china
 3cg112.pdf

3CG112 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0

 9.4. Size:103K  china
 3cg114b.pdf

3CG114B PNP PCM TA=25 1.0 W ICM 1.0 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VCE=2V

 9.5. Size:132K  china
 3cg111.pdf

3CG111 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.

 9.6. Size:267K  lzg
 3cg1198k.pdf

2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1782K(3DG1782K) Features High breakdown,low V ,complements the 2SD1782K(3DG1782K). CE(sat) /Absolute maximum ratings(Ta=25 ) Sym

 9.7. Size:218K  lzg
 3cg1128.pdf

2SA1128(3CG1128) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency output amplifier. , 2SC1788(3DG1788) Features low V ,complementary pair with 2SC1788(3DG1788). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -25 V CBO V -20 V CEO

 9.8. Size:381K  lzg
 3cg1132.pdf

2SB1132(3CG1132) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1664(3DG1664) Features Low saturation voltage, complements the 2SD1664(3DG1664). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -40 V

 9.9. Size:262K  lzg
 3cg1189.pdf

2SB1189(3CG1189) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1767(3DG1767) Features Low V complements the 2SD1767(3DG1767). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -80 V CBO V -80 V C

 9.10. Size:292K  lzg
 3cg1188.pdf

2SB1188(3CG1188) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1766(3DG1766) Features Low V complements the 2SD1766(3DG1766). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V C

 9.11. Size:415K  lzg
 3cg1175.pdf

2SA1175(3CG1175) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of audio frequency amplifier. , , 2SC2785(3DG2785) Features High voltage and excellent h linearity, complementary pair with 2SC2785(3DG2785). FE /Absolute maximum ratings(Ta=25 )

 9.12. Size:219K  lzg
 3cg1182.pdf

2SB1182(3CG1182) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1758(3DG1758) Features Low V complements the 2SD1758(3DG1758). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V

 9.13. Size:230K  lzg
 3cg1197k.pdf

2SB1197K(3CG1197K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency amplifier applications. , 2SD1781K(3DG1781K) Features Low V ,complements the 2SD1781K(3DG1781K). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32