3DD100 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3DD100

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3 TO220 TO257

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3DD100 datasheet

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3dd100.pdf pdf_icon

3DD100

 0.1. Size:206K  inchange semiconductor
3dd100e.pdf pdf_icon

3DD100

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100E DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 0.2. Size:184K  inchange semiconductor
3dd100c.pdf pdf_icon

3DD100

E Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD100C DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMU

 0.3. Size:184K  inchange semiconductor
3dd100b.pdf pdf_icon

3DD100

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD100B DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

Otros transistores... 3CK5323, 3CK9, 3DD03T, 3DD04T, 3DD05, 3DD05T, 3DD1, 3DD10, MJE340, 3DD101, 3DD102, 3DD103, 3DD104, 3DD11, 3DD12, 3DD122, 3DD127D3