3DD13001P1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD13001P1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 3DD13001P1
3DD13001P1 Datasheet (PDF)
3dd13001p1.pdf
NPN R 3DD13001 P1 3DD13001 P1 NPN VCEO 400 V IC 0.2 A Ptot Ta=25 0.6 W
3dd13001p.pdf
NPN R 3DD13001 P 3DD13001 P NPN VCEO 400 V IC 0.17 A Ptot Ta=25 0.6 W
3dd13001.pdf
3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADBCLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E CFRange 17~23 20~26 G H1Base 1113 2Collector 222Emitter 3Emitter 333
3dd13001b.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)FEATURE power switching applications TO-92 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit 1300113001=Device code S 6B S 6B=Code 1ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 Bulk 1000pcs/BagB-TA
3dd13001.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta
3dd13001.pdf
3DD13001(NPN)TO-92 Bipolar TransistorsTO-92 1. BASE 4.455.21 2. COLLECTOR 3. EMITTER 4.322.92 5.33MINFeatures power switching applications 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.19Symbol Parameter Value Units2.671.14VCBO Collector -Base Voltage 600 V 1.402.03VCEO Collector-Emitter Voltage 400 V 2.67VEB
3dd13001a1.pdf
NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
3dd13001 a1.pdf
NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
3dd13001.pdf
SMD Type TransistorsNPN Transistors3DD13001 Features1.70 0.1 Collector-emitter Voltage: V(BR)CEO=400V Collector Current: IC=0.2A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 600 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 7 VCollector Current -
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC3173 | BP8-12 | 2SB251A
History: 2SC3173 | BP8-12 | 2SB251A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050