3DD13002RUD Todos los transistores

 ..1. Size:136K  crhj
 3dd13002rud.pdf

NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W

 5.1. Size:182K  crhj
 3dd13002r1d.pdf

 6.1. Size:4819K  jiangsu
 3dd13002.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) TO-251-3L TO-252-2L FEATURE 1 2 3 power switching applications 1. BASE MAXIMUM RATINGS(Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V 3. EMITTER 1 VCEO Collector-Emi

 6.2. Size:842K  jiangsu
 3dd13002b.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power Switching Applications 1.EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 13002B=Device code 13002B Solid dot=Green molding compound device, XXX if none,the normal device XXX=Code 1 ORDERING INFORMATION Par

 6.3. Size:456K  lge
 3dd13002.pdf

3DD13002(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features power switching applications MAXIMUM RATINGS* TA=25 unless otherwise noted TO-252-2L Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector

 6.4. Size:398K  lge
 3dd13002b.pdf

3DD13002B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 Symbol Parameter Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 600 V 1.14 1.40 2.03 VCEO Collector-Emitter Voltage 400 V 2.67

 6.5. Size:149K  wietron
 3dd13002b.pdf

3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 400 Vdc Collector-Base Voltage VCBO 600 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 1.0 Adc PD 1.0 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Tempera

 6.6. Size:333K  jilin sino
 3dd13002s.pdf

 6.7. Size:592K  blue-rocket-elect
 br3dd13002dg1k.pdf

MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High freque

 6.8. Size:456K  blue-rocket-elect
 br3dd13002e1k.pdf

MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc

 6.9. Size:178K  crhj
 3dd13002b1-7.pdf

NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

 6.10. Size:178K  crhj
 3dd13002 b1-7.pdf

NPN R 3DD13002 B1-7 3DD13002 B1-7 VCEO 450 V NPN IC 0.5 A Ptot Ta=25 0.7 W

 6.11. Size:182K  crhj
 3dd13002b1.pdf

 6.12. Size:136K  crhj
 3dd13002 rud.pdf

NPN R 3DD13002 RUD 3DD13003 RUD VCEO 200 V NPN IC 1 A Ptot Ta=25 0.5 W

 6.13. Size:183K  crhj
 3dd13002b1d.pdf

NPN R 3DD13002 B1D 3DD13002 B1D VCEO 400 V NPN IC 0.5 A Ptot Ta=25 0.8 W

 6.14. Size:182K  crhj
 3dd13002 b1.pdf

 6.15. Size:1343K  kexin
 3dd13002.pdf

SMD Type Transistors NPN Transistors 3DD13002 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=400V Power Switching Applications 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 V Emitt

 6.16. Size:197K  wuxi china
 3dd13002b1.pdf

NPN R 3DD13002 B1 3DD13002 B1 NPN VCEO 400 V IC 0.5 A Ptot Ta=25 0.8 W