3DD155 Todos los transistores

 ..1. Size:152K  china
 3dd155.pdf

3DD155 NPN A B C D E F G PCM TC=75 20 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCB

 ..2. Size:256K  inchange semiconductor
 3dd155.pdf

isc Silicon NPN Power Transistor 3DD155 DESCRIPTION DC Current Gain h = 15-120@I = 1A FE C Collector-Emitter Saturation Voltage V )= 1.0V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RA

 0.1. Size:146K  1
 3dd1555.pdf

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 5 A I C 5 V(max) V CE(sat) t 1 s(max) f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEATURES

 9.1. Size:153K  china
 3dd157.pdf

3DD157 NPN A B C D E F G PCM TC=75 30 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.3 /W IC=1A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5

 9.2. Size:152K  china
 3dd153.pdf

3DD153 NPN A B C D E F G PCM TC=75 10 W ICM 1.5 A Tjm 175 Tstg -55 150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.5mA 5.0 V ICBO

 9.3. Size:119K  china
 3dd15.pdf

3DD15 NPN A B C D E F PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2.0 /W IC=1A V(BR)CBO ICB 5mA 60 150 200 300 400 500 V V(BR)CEO ICE 5mA 60 100 120 200 300 350 V V(BR)EBO IEB 5mA 4.0 V ICBO VCB=50V

 9.4. Size:153K  china
 3dd159.pdf

3DD159 NPN A B C D E F G PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=3mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=3mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=5

 9.5. Size:152K  china
 3dd151.pdf

3DD151 NPN A B C D E F G PCM TC=75 5 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 20 /W IC=0.1A V(BR)CBO ICB=1mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB

 9.6. Size:192K  inchange semiconductor
 3dd159f.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.7. Size:192K  inchange semiconductor
 3dd159c.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.8. Size:206K  inchange semiconductor
 3dd15d.pdf

isc Silicon NPN Power Transistor 3DD15D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , r

 9.9. Size:204K  inchange semiconductor
 3dd15.pdf

isc Silicon NPN Power Transistor 3DD15 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , reg

 9.10. Size:183K  inchange semiconductor
 3dd159a.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD159A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE

 9.11. Size:192K  inchange semiconductor
 3dd159d.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.12. Size:192K  inchange semiconductor
 3dd159e.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.13. Size:192K  inchange semiconductor
 3dd159b.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD159B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.14. Size:206K  inchange semiconductor
 3dd15b.pdf

isc Silicon NPN Power Transistor 3DD15B DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , r