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3DD507 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DD507
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 3DD507

 

3DD507 Datasheet (PDF)

 ..1. Size:26K  shaanxi
3dd507.pdf

3DD507

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD507NPN Silicon Low Frequency High Power Transistor Features: 1. Three pins isnt connected with the cover. It could be produced according to the requirement. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4

 9.1. Size:144K  jilin sino
3dd5036.pdf

3DD507

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY R3DD5036 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO8 A I C3 V(max) V

 9.2. Size:359K  jilin sino
3dd5024p.pdf

3DD507
3DD507

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCYR 3DD5024P Package MAIN CHARACTERISTICSTO-220HF 1500 VBVCBO 8AIC 3V(max)VCE(sat) 1 s(max)tf APPLICATIONS Horizontal deflection output for color TV.1 2 3 FEATU

 9.3. Size:368K  jilin sino
3dd5027.pdf

3DD507
3DD507

NPN WSRs_sQvfSO{HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD5027 ;NSpe MAIN CHARACTERISTICS \ Package IC 3AVCEO 800VPC(TO-220) 50W(u APPLICATIONS op Energy-saving ligh

 9.4. Size:213K  jilin sino
3dd5032.pdf

3DD507
3DD507

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY R3DD5032 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BVCBO 8 A Ic 3 V(max) Vce(sat)

 9.5. Size:471K  jilin sino
3dd5032p.pdf

3DD507
3DD507

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5032P Package MAIN CHARACTERISTICSTO-3P(H)IS 1500 VBVCBO 8 AIC 3 V(max)VCE(sat) 1s(max)tf APPLICATIONS Switching power Supply for color TV. FEATURE

 9.6. Size:146K  jilin sino
3dd5039.pdf

3DD507
3DD507

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY R3DD5039 \ Package ;NSpe MAIN CHARACTERISTICS TO-220HF 900 V BV CBO6 A I C1.0 V(max) V C

 9.7. Size:432K  jilin sino
3dd5023p.pdf

3DD507
3DD507

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCYR 3DD5023P Package MAIN CHARACTERISTICSTO-220HF 1500 VBVCBO 6 AIC 5 V(max)VCE(sat) 1 s(max)tf APPLICATIONS Horizontal deflection output for color TV.1 2 3 FEA

 9.8. Size:235K  jilin sino
3dd5011.pdf

3DD507
3DD507

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R3DD5011 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS BVCBO 900VIC 10 AVCE(sat) 0.5 V(max)

 9.9. Size:481K  jilin sino
3dd5038p.pdf

3DD507
3DD507

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5038P Package MAIN CHARACTERISTICSTO-3P(H)IS 1200 VBVCBO 10 AIC 0.5 V(max)VCE(sat) 0.3s(max)tf APPLICATIONS Switching power Supply for color TV. FE

 9.10. Size:528K  jilin sino
3dd5017p.pdf

3DD507
3DD507

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5017P Package MAIN CHARACTERISTICSTO-3P(H)IS 1000 VBVCBO 12 AIC 0.5 V(max)VCE(sat) 0.3 s(max)tf APPLICATIONS Switching power Supply for color TV. F

 9.11. Size:152K  jilin sino
3dd5040.pdf

3DD507

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY R3DD5040 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO22 A I C3 V(max) V

 9.12. Size:147K  jilin sino
3dd5038.pdf

3DD507

NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038 FOR LOW FREQUENCY R3DD5038 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1200 V BV CBO10 A I C0.5 V(max) V

 9.13. Size:485K  jilin sino
3dd5036p.pdf

3DD507
3DD507

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCYR 3DD5036P Package MAIN CHARACTERISTICS TO-3P(H)IS1500 V BVCBO 10 A IC 3 V(max) VCE(sat) 0.6 s(max) tf APPLICATIONS Horizontal deflection output for color TV.B C E ENT

 9.14. Size:207K  blue-rocket-elect
3dd5023.pdf

3DD507
3DD507

3DD5023 NPN /SILICON NPN TRANSISTOR Application: Color TV Horizontal deflection output applications :, Features: High breakdown voltageLow drain currentHigh switching speedLow saturation voltageExcellent current characte

 9.15. Size:207K  blue-rocket-elect
3dd5024.pdf

3DD507
3DD507

3DD5024 NPN /SILICON NPN TRANSISTOR Application: Color TV Horizontal deflection output applications :, Features: High breakdown voltageLow drain currentHigh switching speedLow saturation voltageExcellent current characte

 9.16. Size:153K  china
3dd50.pdf

3DD507

3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA

 9.17. Size:37K  shaanxi
3dd505.pdf

3DD507

Shaanxi Qunli Electric Co., Ltd 11:54:41 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD505,BU104 NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,

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