3DD507 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD507
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO3
Búsqueda de reemplazo de 3DD507
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3DD507 datasheet
..1. Size:26K shaanxi
3dd507.pdf 
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD507 NPN Silicon Low Frequency High Power Transistor Features 1. Three pins isn t connected with the cover. It could be produced according to the requirement. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4
9.2. Size:359K jilin sino
3dd5024p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY R 3DD5024P Package MAIN CHARACTERISTICS TO-220HF 1500 V BV CBO 8A I C 3V(max) V CE(sat) 1 s(max) t f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEATU
9.5. Size:471K jilin sino
3dd5032p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5032P Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 8 A I C 3 V(max) V CE(sat) 1 s(max) t f APPLICATIONS Switching power Supply for color TV. FEATURE
9.7. Size:432K jilin sino
3dd5023p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY R 3DD5023P Package MAIN CHARACTERISTICS TO-220HF 1500 V BV CBO 6 A I C 5 V(max) V CE(sat) 1 s(max) t f APPLICATIONS Horizontal deflection output for color TV. 1 2 3 FEA
9.9. Size:481K jilin sino
3dd5038p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5038P Package MAIN CHARACTERISTICS TO-3P(H)IS 1200 V BV CBO 10 A I C 0.5 V(max) V CE(sat) 0.3 s(max) t f APPLICATIONS Switching power Supply for color TV. FE
9.10. Size:528K jilin sino
3dd5017p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5017P Package MAIN CHARACTERISTICS TO-3P(H)IS 1000 V BV CBO 12 A I C 0.5 V(max) V CE(sat) 0.3 s(max) t f APPLICATIONS Switching power Supply for color TV. F
9.13. Size:485K jilin sino
3dd5036p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCY R 3DD5036P Package MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO 10 A I C 3 V(max) V CE(sat) 0.6 s(max) t f APPLICATIONS Horizontal deflection output for color TV. B C E ENT
9.14. Size:207K blue-rocket-elect
3dd5023.pdf
3DD5023 NPN /SILICON NPN TRANSISTOR Application Color TV Horizontal deflection output applications , Features High breakdown voltage Low drain current High switching speed Low saturation voltage Excellent current characte
9.15. Size:207K blue-rocket-elect
3dd5024.pdf
3DD5024 NPN /SILICON NPN TRANSISTOR Application Color TV Horizontal deflection output applications , Features High breakdown voltage Low drain current High switching speed Low saturation voltage Excellent current characte
9.16. Size:153K china
3dd50.pdf
3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA
9.17. Size:37K shaanxi
3dd505.pdf
Shaanxi Qunli Electric Co., Ltd 11 54 41 Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD505,BU104 NPN Silicon Low Frequency High Power Transistor Features 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,
Otros transistores... 3DD4540A7, 3DD4540A9, 3DD4550A4, 3DD4A, 3DD4G, 3DD5, 3DD50, 3DD505, C945, 3DD51, 3DD510, 3DD511, 3DD512, 3DD515, 3DD53, 3DD56, 3DD57
