3DD51 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD515NPN Silicon Low Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequency power amplify, power adjustm

Shaanxi Qunli Electric Co., Ltd 11:53:31 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD510,3DD511,DD04,DD05 NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustme

Shaanxi Qunli Electric Co., Ltd 11:53:05 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD512,3DD515 NPN Silicon Low Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequen

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD511NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustment. 4. Quality Class: JP, JT, JCT, GS,