3DD51 Todos los transistores

 ..1. Size:153K  china
 3dd51.pdf

3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55 150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA

 0.1. Size:23K  shaanxi
 3dd515.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD515 NPN Silicon Low Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequency power amplify, power adjustm

 0.2. Size:36K  shaanxi
 3dd510.pdf

Shaanxi Qunli Electric Co., Ltd 11 53 31 Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD510,3DD511,DD04,DD05 NPN Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustme

 0.3. Size:34K  shaanxi
 3dd512.pdf

Shaanxi Qunli Electric Co., Ltd 11 53 05 Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD512,3DD515 NPN Silicon Low Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequen

 0.4. Size:23K  shaanxi
 3dd511.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD511 NPN Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustment. 4. Quality Class JP, JT, JCT, GS,