3DG2222 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DG2222
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 3DG2222
3DG2222 Datasheet (PDF)
3dg2222.pdf
2N2222(3DG2222) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 30 V CEO V 5.0 V EBO I 600 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(Ta
3dg2222a.pdf
2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(
3dg2229.pdf
2SC2229(3DG2229) NPN /SILICON NPN TRANSISTOR :, Purpose: TV video output,high voltage switching and driver stage of audio amplifier applications. :,, Features: High breakdown voltage, low output capacitance, high f . T/
br3dg227k.pdf
KSD227(BR3DG227K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features KSA642BR3CG642K Complement to KSA642(BR3CG642K),PC=400Mw. / Applications Low frequency power amplifier.
3dg2219.pdf
3DG2219(2N2219) NPN PCM TA=25 800 mW ICM 800 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB10A 75 V V(BR)CEO ICE10mA 40 V V(BR)EBO IEB10A 6.0 V ICBO VCB=60V 10 nA IEBO VCB=3.0V 10 nA IC=0.5A VCEsat 1.0 V IB=0.05A VCE=10V hFE 100~300 IC=0.15A
3dg2218a.pdf
3DG2218A NPN PCM TA=25 800 mW ICM 800 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=10mA 50 V V(BR)CBO ICB=10 A 75 V V(BR)EBO IEB=10 A 6 V ICEO VCE=50V 10 A ICBO VCB=60V 10 A IEBO VEB=6V 10 A VBEsat 2.0 V IC=500mA IB=5
3dg2274.pdf
2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. Features: High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25) Symbol R
3dg2216m.pdf
2SC2216M(3DG2216M) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. :,h FEFeatures: High gain, good h linearity. FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EB
3dg2274k.pdf
2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. Features: High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25) Symbol R
3dg2240.pdf
2SC2240(3DG2240) NPN /SILICON NPN TRANSISTOR : Purpose: Low noise audio amplifier applications. : ,, Features: Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V 120
3dg2235.pdf
2SC2235(3DG2235) NPN /SILICON NPN TRANSISTOR :, Purpose: Audio frequency amplifier and driver stage amplifier Applications. : 2SA965(3CG965)/Features: Complementary to 2SA965(3CG965). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 120 V CBO V 120 V
3dg2216.pdf
2SC2216(3DG2216) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. :,h FEFeatures: High gain, good h linearity. FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EBO
3dg2230.pdf
2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :V ,/Features: High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25)
3dg2236.pdf
2SC2236(3DG2236) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency power amplifier applications. : 2SA966(3CG966) 3W /Features: Complementary to 2SA966(3CG966) And 3 watts output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V
3dg2230a.pdf
2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :V ,/Features: High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25)
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050