3DG2240 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DG2240
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: TO92
Búsqueda de reemplazo de 3DG2240
- Selecciónⓘ de transistores por parámetros
3DG2240 datasheet
..1. Size:173K lzg
3dg2240.pdf 
2SC2240(3DG2240) NPN /SILICON NPN TRANSISTOR Purpose Low noise audio amplifier applications. , , Features Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V 120
9.1. Size:451K blue-rocket-elect
br3dg227k.pdf
KSD227(BR3DG227K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features KSA642 BR3CG642K Complement to KSA642(BR3CG642K),PC=400Mw. / Applications Low frequency power amplifier.
9.2. Size:109K china
3dg2219.pdf
3DG2219(2N2219) NPN PCM TA=25 800 mW ICM 800 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB 10 A 75 V V(BR)CEO ICE 10mA 40 V V(BR)EBO IEB 10 A 6.0 V ICBO VCB=60V 10 nA IEBO VCB=3.0V 10 nA IC=0.5A VCEsat 1.0 V IB=0.05A VCE=10V hFE 100 300 IC=0.15A
9.3. Size:145K china
3dg2218a.pdf
3DG2218A NPN PCM TA=25 800 mW ICM 800 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=10mA 50 V V(BR)CBO ICB=10 A 75 V V(BR)EBO IEB=10 A 6 V ICEO VCE=50V 10 A ICBO VCB=60V 10 A IEBO VEB=6V 10 A VBEsat 2.0 V IC=500mA IB=5
9.4. Size:285K foshan
3dg2274.pdf
2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR Purpose Low frequency power amplifier applications. Features High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol R
9.5. Size:372K foshan
3dg2216m.pdf
2SC2216M(3DG2216M) NPN /SILICON NPN TRANSISTOR Purpose TV final picture IF amplifier applications. ,h FE Features High gain, good h linearity. FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EB
9.6. Size:285K foshan
3dg2274k.pdf
2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR Purpose Low frequency power amplifier applications. Features High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol R
9.7. Size:367K lzg
3dg2235.pdf
2SC2235(3DG2235) NPN /SILICON NPN TRANSISTOR , Purpose Audio frequency amplifier and driver stage amplifier Applications. 2SA965(3CG965) /Features Complementary to 2SA965(3CG965). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 120 V CBO V 120 V
9.8. Size:209K lzg
3dg2216.pdf
2SC2216(3DG2216) NPN /SILICON NPN TRANSISTOR Purpose TV final picture IF amplifier applications. ,h FE Features High gain, good h linearity. FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EBO
9.9. Size:211K lzg
3dg2222.pdf
2N2222(3DG2222) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 30 V CEO V 5.0 V EBO I 600 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta
9.10. Size:211K lzg
3dg2230.pdf
2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR , /Purpose High voltage general amplifier, color TV class B sound output applications. V , /Features High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25 )
9.11. Size:435K lzg
3dg2236.pdf
2SC2236(3DG2236) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency power amplifier applications. 2SA966(3CG966) 3W /Features Complementary to 2SA966(3CG966) And 3 watts output applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V
9.12. Size:194K lzg
3dg2222a.pdf
2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(
9.13. Size:211K lzg
3dg2230a.pdf
2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR , /Purpose High voltage general amplifier, color TV class B sound output applications. V , /Features High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25 )
9.14. Size:219K lzg
3dg2229.pdf
2SC2229(3DG2229) NPN /SILICON NPN TRANSISTOR , Purpose TV video output,high voltage switching and driver stage of audio amplifier applications. , , Features High breakdown voltage, low output capacitance, high f . T /
Otros transistores... 3DG2219
, 3DG2222
, 3DG2222A
, 3DG2229
, 3DG2230
, 3DG2230A
, 3DG2235
, 3DG2236
, TIP3055
, 3DG2274
, 3DG2274K
, 3DG2308
, 3DG2383
, 3DG2383T
, 3DG2404
, 3DG2411K
, 3DG2412K
.
