3DG2274 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3DG2274
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO92

Búsqueda de reemplazo de transistor bipolar 3DG2274

3DG2274 Datasheet (PDF)

..1. Size:285K foshan
3dg2274.pdf

2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. Features: High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25) Symbol R

0.1. Size:285K foshan
3dg2274k.pdf

8.1. Size:451K blue-rocket-elect
br3dg227k.pdf

KSD227(BR3DG227K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features KSA642BR3CG642K Complement to KSA642(BR3CG642K),PC=400Mw. / Applications Low frequency power amplifier.

9.1. Size:109K china
3dg2219.pdf

3DG2219(2N2219) NPN PCM TA=25 800 mW ICM 800 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB10A 75 V V(BR)CEO ICE10mA 40 V V(BR)EBO IEB10A 6.0 V ICBO VCB=60V 10 nA IEBO VCB=3.0V 10 nA IC=0.5A VCEsat 1.0 V IB=0.05A VCE=10V hFE 100~300 IC=0.15A

9.2. Size:145K china
3dg2218a.pdf

3DG2218A NPN PCM TA=25 800 mW ICM 800 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=10mA 50 V V(BR)CBO ICB=10 A 75 V V(BR)EBO IEB=10 A 6 V ICEO VCE=50V 10 A ICBO VCB=60V 10 A IEBO VEB=6V 10 A VBEsat 2.0 V IC=500mA IB=5

9.3. Size:372K foshan
3dg2216m.pdf

2SC2216M(3DG2216M) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. :,h FEFeatures: High gain, good h linearity. FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EB

9.4. Size:173K lzg
3dg2240.pdf

2SC2240(3DG2240) NPN /SILICON NPN TRANSISTOR : Purpose: Low noise audio amplifier applications. : ,, Features: Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V 120

9.5. Size:367K lzg
3dg2235.pdf

2SC2235(3DG2235) NPN /SILICON NPN TRANSISTOR :, Purpose: Audio frequency amplifier and driver stage amplifier Applications. : 2SA965(3CG965)/Features: Complementary to 2SA965(3CG965). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 120 V CBO V 120 V

9.6. Size:209K lzg
3dg2216.pdf

2SC2216(3DG2216) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. :,h FEFeatures: High gain, good h linearity. FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EBO

9.7. Size:211K lzg
3dg2222.pdf

2N2222(3DG2222) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 30 V CEO V 5.0 V EBO I 600 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(Ta

9.8. Size:211K lzg
3dg2230.pdf

2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :V ,/Features: High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25)

9.9. Size:435K lzg
3dg2236.pdf

2SC2236(3DG2236) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency power amplifier applications. : 2SA966(3CG966) 3W /Features: Complementary to 2SA966(3CG966) And 3 watts output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V

9.10. Size:194K lzg
3dg2222a.pdf

2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(

9.11. Size:211K lzg
3dg2230a.pdf

9.12. Size:219K lzg
3dg2229.pdf

2SC2229(3DG2229) NPN /SILICON NPN TRANSISTOR :, Purpose: TV video output,high voltage switching and driver stage of audio amplifier applications. :,, Features: High breakdown voltage, low output capacitance, high f . T/

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: UN6223

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D