3DG2703 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3DG2703
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 13 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92L

Búsqueda de reemplazo de transistor bipolar 3DG2703

3DG2703 Datasheet (PDF)

..1. Size:290K lzg
3dg2703.pdf

2SC2703(3DG2703) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. ::h =100320 FEFeatures: High DC current gain: h =100320. FE/Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO30 V V 30 V CEO V 5.0

9.1. Size:110K china
3dg27.pdf

3DG27 NPN A B C D E PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 2.0 A ICEO VCE=30V 2.0 A IEBO

9.2. Size:177K foshan
3dg2736.pdf

2SC2736(3DG2736) NPN /SILICON NPN TRANSISTOR :, Purpose: UHF/VHF frequency converter, local oscillator. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150 j T -55

9.3. Size:223K foshan
3dg2710.pdf

2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR : Purpose: Audio amplifier applications. : , 2SA1150(3CG1150) Features: High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 35 V CBO

9.4. Size:211K foshan
3dg2717.pdf

2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I

9.5. Size:234K foshan
3dg2717m.pdf

2SC2717M(3DG2717M) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO

9.6. Size:297K foshan
3dg2712.pdf

2SC2712(3DG2712) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency general purpose amplifier applications. Features: High voltage, high current, high h , low noise, excellent h linearity. FE FE/Absolute maximum ratings(Ta=25)

9.7. Size:171K foshan
3dg2715.pdf

2SC2715(3DG2715) NPN /SILICON NPN TRANSISTOR :/Purpose: High frequency amplifier applications. : Features: High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. /Absolute maximum ratings(Ta=25) Sy

9.8. Size:189K foshan
3dg2714.pdf

2SC2714(3DG2714) NPN /SILICON NPN TRANSISTOR :/Purpose: High frequency amplifier applications. :, Features: Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 30 V CEO V 4

9.9. Size:141K foshan
3dg2734.pdf

2SC2734(3DG2734) NPN /SILICON NPN TRANSISTOR :,, Purpose: UHF frequency converter, local oscillatorwide band amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150

9.10. Size:152K foshan
3dg2732.pdf

2SC2732(3DG2732) NPN /SILICON NPN TRANSISTOR : Purpose: UHF frequency converter. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I 20 mA C P 150 mW C T 150 j T -55150 stg /Electrical charact

9.11. Size:321K lzg
3dg2785.pdf

2SC2785(3DG2785) NPN /SILICON NPN TRANSISTOR :/Purpose: Driver stage of AF amplifier and low speed switching. :,, 2SA1175(3CG1175)/Features: High voltage, excellent h linearity, complementary pair with 2SA1175(3CG1175). FE/Absolute maximum ratings(Ta=25)

9.12. Size:396K lzg
3dg2786.pdf

2SC2786(3DG2786) NPN /SILICON NPN TRANSISTOR : Purpose: FM RF amplifier and local oscillator of FM tuner. : Features: High gain bandwidth product, small output capacitance,low noise figure. /Absolute maximum r

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FGT8766

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