3DG2715 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2715(3DG2715) NPN /SILICON NPN TRANSISTOR :/Purpose: High frequency amplifier applications. : Features: High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. /Absolute maximum ratings(Ta=25) Sy

2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR : Purpose: Audio amplifier applications. : , 2SA1150(3CG1150) Features: High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 35 V CBO

2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I

2SC2717M(3DG2717M) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO

2SC2712(3DG2712) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency general purpose amplifier applications. Features: High voltage, high current, high h , low noise, excellent h linearity. FE FE/Absolute maximum ratings(Ta=25)

2SC2714(3DG2714) NPN /SILICON NPN TRANSISTOR :/Purpose: High frequency amplifier applications. :, Features: Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 30 V CEO V 4