3DG2881 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3DG2881
   Código: HCO_HCY
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT89

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3DG2881 Datasheet (PDF)

..1. Size:454K foshan
3dg2881.pdf

2SC2881(3DG2881) NPN /SILICON NPN TRANSISTOR : Purpose: power amplifier applications. ,, 2SA1201(3CG1201) Features: High f , high V , small flat package, complementary pair with 2SA1201(3CG1201). T CEO/Absolute maximum ratings(Ta=25)

0.1. Size:373K foshan
3dg2881a.pdf

2SC2881A(3DG2881A) NPN /SILICON NPN TRANSISTOR : Purpose: power amplifier applications. ,, 2SA1201A(3CG1201A) Features: High f , high V , small flat package, complementary pair with 2SA1201A(3CG1201A). T CEO/Absolute maximum ratings(Ta=25)

8.1. Size:301K foshan
3dg2884.pdf

2SC2884(3DG2884) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency amplifier applications. : h , 1W , 2SA1204(3CG1204) FE,Features: High h , for out stage of 1 watts amplifier, complementary to 2SA1204(3CG1204). FE/Absolute maximum ratings(Ta=25) Sym

9.1. Size:305K foshan
3dg2812.pdf

2SC2812(3DG2812) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency general-purpose amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 55 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 300 mA cp P 200 mW C T 150 j T -55150

9.2. Size:200K lzg
3dg2839.pdf

2SC2839(3DG2839) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency general amplifier applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 20 V CEO V 5.0 V EBO I 30 mA C P (Ta=25) 150 mW C T 150 j T -55150 stg

9.3. Size:262K lzg
3dg2873.pdf

2SC2873(3DG2873) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier and switching applications. : , 2SA1213(3CG1213) Features: Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SA1213(3CG1213).

9.4. Size:264K lzg
3dg2878.pdf

2SC2878(3DG2878) NPN /SILICON NPN TRANSISTOR :/Purpose: For muting and switching applications. :, /Features: High reverse h reverse: FEh =150(V =-2V,I =-2mA),low on resistance. FE CE C/Absolute maximum ratings(Ta=25) Symbol Rating

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Liste

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