3DG3439 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

3DG3439 Datasheet (PDF)

..1. Size:117K china
3dg3439.pdf pdf_icon

3DG3439(2N3439) NPN PCM TA=25 800 mW ICM 1000 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=1mA 450 V V(BR)CEO ICE=1mA 350 V V(BR)EBO IEB=1mA 7.0 V ICBO VCB=350V 20 A ICEO VCB=300V 20 A IEBO VEB=6V 20 A IC=50mA VCEsat 0.5 V IB=4mA VCE=10V hFE

9.1. Size:120K china
3dg3440.pdf pdf_icon

3DG3440(2N3440) NPN PCM TA=25 800 mW ICM 1000 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=2mA 300 V V(BR)CEO ICE=2mA 250 V V(BR)EBO IEB=1mA 7.0 V ICBO VCB=300V 5.0 A ICEO VCE=200V 2.0 A IEBO VEB=7V 10 A VBEsat 1.3 IC=50mA V IB=4mA VCEs

9.2. Size:111K china
3dg3402.pdf pdf_icon

3DG3402(2SC3402) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=10A 50 V V(BR)CEO ICE=100A 50 V V(BR)EBO IEB=10A 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 330 A IC=10mA VCEsat 0.3 V I

9.3. Size:301K foshan
3dg3478.pdf pdf_icon

2SC3478(3DG3478) NPN /SILION NPN TRANSISTOR : Purpose: General purpose amplifier applications requiring high breakdown voltages. : , 2SA1376(3CG1376) Features: High breakdown voltage, good h linearity, complementary to 2SA1376(3CG1376). FE/Absolute maxim

Otros transistores... 3DG3326 , 3DG3330 , 3DG3332 , 3DG3355 , 3DG3356 , 3DG3357 , 3DG3399 , 3DG3402 , 2SD669 , 3DG3440 , 3DG3478 , 3DG3545 , 3DG3648 , 3DG3779 , 3DG380TM , 3DG3838K , 3DG383TM .