3DK2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

3DK2 NPN A B C D PCM TC=25 300 mW ICM 30 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 30 20 30 V V(BR)CEO ICE=0.1mA 25 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1

3DK2222A(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 2. BASE 5.21 3. COLLECTOR 4.322.92 5.33FeaturesMIN Epitaxial planar die construction 3.43MINMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.412.67Symbol Parameter Value Units3.182.034.19VCBO Collector-Base Voltage 75 V2.671.14VCEO Collector-Emitter Voltage 40 V 1.402.032.67

3DK2222A SOT-23 Transistor(NPN)1. BASE SOT-232.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 V

3DK21 NPN PCM TC=25 350 W ICM 40 A Tjm 175 Tstg -55~150 RthJC 0.5 /W V(BR)CBO ICB=3mA 250 V V(BR)CEO ICE=3mA 200 V V(BR)EBO IEB=3mA 7.0 V ICEO VCE=160V 3.0 mA IEBO VEB=5V 1.0 mA VBEsat 1.5 IC=25A V IB=3A VCEsat 1.0 V

3DK28 NPN A B C D E F G H PCM TC=25 300 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 35 35 35 25 30 15 25 30 V V(BR)CEO ICE=0.1mA 25 15 15 20 25 15 20 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A IC

3DK209 NPN D A B C E F G E PCM TC=25 200 W ICM 15 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=5mA 80 150 200 250 350 450 500 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 350 V V(BR)EBO IEB=1mA 5.0 V ICEO VCE=120V 2.0 mA

3DK2222 NPN PCM TC=25 500 mW ICM 800 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 30 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 1.0 A ICEO VCB=10V 2.0 A IEBO VEB=4V 1.0 A VBEsat 1.2 IC=200mA V IB=20

3DK29 NPN A B C D PCM TC=25 1000 mW ICM 500 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 25 40 25 40 V V(BR)CEO ICE=0.1mA 15 30 15 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 2.0 A IEBO VEB=4V 1.0

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK29-IINPN Silicon High Frequency M-Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency small signal