PH3134-30S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH3134-30S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 350 W
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 3.6 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3400 MHz
Ganancia de corriente contínua (hfe): 7.5
Paquete / Cubierta: CERAMIC
Búsqueda de reemplazo de transistor bipolar PH3134-30S
PH3134-30S Datasheet (PDF)
ph3134-30s.pdf
PH3134-30S Radar Pulsed Power Transistor M/A-COM Products 30W, 3.1-3.4 GHz, 1s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
ph3134-55l.pdf
PH3134-55L Radar Pulsed Power Transistor M/A-COM Products 55W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph3134-65m.pdf
PH3134-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph3134-25m.pdf
PH3134-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph3134-10m.pdf
PH3134-10M Radar Pulsed Power Transistor M/A-COM Products 10W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph3134-20l.pdf
PH3134-20L Radar Pulsed Power Transistor M/A-COM Products 20W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3DG1859 | 3DF5
Liste
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