PH3134-30S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH3134-30S  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 350 W

Tensión colector-emisor (Vce): 65 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 3.6 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3400 MHz

Ganancia de corriente contínua (hFE): 7.5

Encapsulados: CERAMIC

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PH3134-30S datasheet

 ..1. Size:94K  macom
 ph3134-30s.pdf pdf_icon

PH3134-30S

PH3134-30S Radar Pulsed Power Transistor M/A-COM Products 30W, 3.1-3.4 GHz, 1 s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.1. Size:95K  macom
 ph3134-55l.pdf pdf_icon

PH3134-30S

PH3134-55L Radar Pulsed Power Transistor M/A-COM Products 55W, 3.1-3.4 GHz, 300 s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.2. Size:95K  macom
 ph3134-65m.pdf pdf_icon

PH3134-30S

PH3134-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.4 GHz, 100 s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.3. Size:102K  macom
 ph3134-25m.pdf pdf_icon

PH3134-30S

PH3134-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.4 GHz, 100 s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

MOSTRAR MÁS

Otros transistores... PH2731-20M, PH2731-5M, PH2731-75L, PH2856-160, PH2931-20M, PH3134-10M, PH3134-20L, PH3134-25M, 2SA1943, PH3134-55L, PH3134-65M, PH3135-20M, PH3135-25S, PH3135-5M, PH3135-65M, PH3135-90S, PHPT60406NY