PH3134-65M Todos los transistores

 

PH3134-65M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH3134-65M
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 350 W
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 7.7 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3400 MHz
   Ganancia de corriente contínua (hfe): 7.5
   Paquete / Cubierta: CERAMIC
 

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PH3134-65M Datasheet (PDF)

 ..1. Size:95K  macom
 ph3134-65m.pdf pdf_icon

PH3134-65M

PH3134-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.1. Size:94K  macom
 ph3134-30s.pdf pdf_icon

PH3134-65M

PH3134-30S Radar Pulsed Power Transistor M/A-COM Products 30W, 3.1-3.4 GHz, 1s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal

 7.2. Size:95K  macom
 ph3134-55l.pdf pdf_icon

PH3134-65M

PH3134-55L Radar Pulsed Power Transistor M/A-COM Products 55W, 3.1-3.4 GHz, 300s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

 7.3. Size:102K  macom
 ph3134-25m.pdf pdf_icon

PH3134-65M

PH3134-25M Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.4 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: STI13005-1 | ZXTP2013 | PBSS8110T

 

 
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