PH3135-65M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH3135-65M
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 350 W
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 7.7 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3500 MHz
Ganancia de corriente contínua (hfe): 7.5
Paquete / Cubierta: CERAMIC
Búsqueda de reemplazo de transistor bipolar PH3135-65M
PH3135-65M Datasheet (PDF)
ph3135-65m.pdf
PH3135-65M Radar Pulsed Power Transistor M/A-COM Products 65W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
ph3135-90s.pdf
PH3135-90S Radar Pulsed Power Transistor M/A-COM Products 90W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
ph3135-25s.pdf
PH3135-25S Radar Pulsed Power Transistor M/A-COM Products 25W, 3.1-3.5 GHz, 2s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
ph3135-5m.pdf
PH3135-5M Radar Pulsed Power Transistor M/A-COM Products 5W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Jul 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal
ph3135-20m.pdf
PH3135-20M Radar Pulsed Power Transistor M/A-COM Products 20W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Released, 10 Aug 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Intern
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
