PHPT60415PY
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHPT60415PY
Código: 0415PAB
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Capacitancia de salida (Cc): 140
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SOT669
Búsqueda de reemplazo de transistor bipolar PHPT60415PY
PHPT60415PY
Datasheet (PDF)
..1. Size:243K nxp
phpt60415py.pdf
PHPT60415PY40 V, 15 A PNP high power bipolar transistor27 May 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60415NY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C
5.1. Size:243K nxp
phpt60415ny.pdf
PHPT60415NY40 V, 15 A NPN high power bipolar transistor27 May 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60415PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed C
6.1. Size:233K nxp
phpt60410ny.pdf
PHPT60410NY40 V, 10 A NPN high power bipolar transistor27 January 2015 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.PNP complement: PHPT60410PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print
6.2. Size:245K nxp
phpt60410py.pdf
PHPT60410PY40 V, 10 A PNP high power bipolar transistor21 January 2015 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-MountedDevice (SMD) power plastic package.NPN complement: PHPT60410NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C
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