PHPT60606NY Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHPT60606NY  📄📄 

Código: 0606NAB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 23 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT669

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PHPT60606NY datasheet

 ..1. Size:235K  nxp
 phpt60606ny.pdf pdf_icon

PHPT60606NY

PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60606PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

 5.1. Size:230K  nxp
 phpt60606py.pdf pdf_icon

PHPT60606NY

PHPT60606PY 60 V, 6 A PNP high power bipolar transistor 9 December 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60606NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.1. Size:305K  nxp
 phpt60603ny.pdf pdf_icon

PHPT60606NY

PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60603PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed

 6.2. Size:303K  nxp
 phpt60603py.pdf pdf_icon

PHPT60606NY

PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60603NY. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

MOSTRAR MÁS

Otros transistores... PHPT60406NY, PHPT60406PY, PHPT60410NY, PHPT60410PY, PHPT60415NY, PHPT60415PY, PHPT60603NY, PHPT60603PY, 2SD1047, PHPT60606PY, PHPT60610NY, PHPT60610PY, PHPT61002NYC, PHPT61002PYC, PHPT610030NK, PHPT610030NPK, PHPT610030PK