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PHPT60606NY . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHPT60606NY
   Código: 0606NAB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 23 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT669
 

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PHPT60606NY Datasheet (PDF)

 ..1. Size:235K  nxp
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PHPT60606NY

PHPT60606NY60 V, 6 A NPN high power bipolar transistor8 December 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60606PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printe

 5.1. Size:230K  nxp
 phpt60606py.pdf pdf_icon

PHPT60606NY

PHPT60606PY60 V, 6 A PNP high power bipolar transistor9 December 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60606NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 6.1. Size:305K  nxp
 phpt60603ny.pdf pdf_icon

PHPT60606NY

PHPT60603NY60V, 3 A NPN high power bipolar transistor10 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT60603PY2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Printed

 6.2. Size:303K  nxp
 phpt60603py.pdf pdf_icon

PHPT60606NY

PHPT60603PY60 V, 3 A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT60603NY.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

MOSTRAR MÁS

Otros transistores... PHPT60406NY , PHPT60406PY , PHPT60410NY , PHPT60410PY , PHPT60415NY , PHPT60415PY , PHPT60603NY , PHPT60603PY , A733 , PHPT60606PY , PHPT60610NY , PHPT60610PY , PHPT61002NYC , PHPT61002PYC , PHPT610030NK , PHPT610030NPK , PHPT610030PK .

History: 2SC4685 | BUX22 | BC461 | 2SB1393A | NSBA144WDXV6T1G | STC201F | BFS58

 

 
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