PHPT61002PYC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHPT61002PYC  📄📄 

Código: 1002PCA

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 125 MHz

Capacitancia de salida (Cc): 28 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT669

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PHPT61002PYC datasheet

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PHPT61002PYC

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 phpt61002pyclh.pdf pdf_icon

PHPT61002PYC

PHPT61002PYCLH 100 V, 2 A PNP high power bipolar transistor 13 July 2017 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT61002NYCLH. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

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PHPT61002PYC

PHPT61002NYCLH 100 V, 2 A NPN high power bipolar transistor 31 March 2017 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61002PYCLH 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced P

 5.2. Size:283K  nxp
 phpt61002nyc.pdf pdf_icon

PHPT61002PYC

PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61002PYC 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

MOSTRAR MÁS

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