PHPT610035PK Todos los transistores

 

PHPT610035PK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHPT610035PK
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 125 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: SOT1205

 Búsqueda de reemplazo de transistor bipolar PHPT610035PK

 

PHPT610035PK Datasheet (PDF)

 ..1. Size:238K  nxp
phpt610035pk.pdf

PHPT610035PK
PHPT610035PK

PHPT610035PKPNP/PNP matched high power double bipolar transistor24 October 2014 Product data sheet1. General descriptionPNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D)Surface-Mounted Device (SMD) power plastic package. Matched version ofPHPT610030PK.NPN/NPN complement: PHPT610035NK.2. Features and benefits Current gain matching 10 % High th

 4.1. Size:241K  nxp
phpt610035nk.pdf

PHPT610035PK
PHPT610035PK

PHPT610035NKNPN/NPN high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK.PNP/PNP complement: PHPT610035PK.NPN/PNP complement: PHPT610035NPK.2. Features and benefits Current gain matchi

 5.1. Size:287K  nxp
phpt61003py.pdf

PHPT610035PK
PHPT610035PK

PHPT61003PY100 V, 3A PNP high power bipolar transistor13 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61003NY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C R

 5.2. Size:291K  nxp
phpt61003ny.pdf

PHPT610035PK
PHPT610035PK

PHPT61003NY100 V, 3 A NPN high power bipolar transistor3 February 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61003PY2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 5.3. Size:295K  nxp
phpt610030npk.pdf

PHPT610035PK
PHPT610035PK

PHPT610030NPKNPN/PNP high power double bipolar transistor14 October 2014 Product data sheet1. General descriptionNPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.PNP/PNP complement: PHPT610030PK.2. Features and benefits High thermal power dissipation capability Suita

 5.4. Size:241K  nxp
phpt610030nk.pdf

PHPT610035PK
PHPT610035PK

PHPT610030NKNPN/NPN high power double bipolar transistor20 October 2014 Product data sheet1. General descriptionNPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.PNP/PNP complement: PHPT610030PK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita

 5.5. Size:239K  nxp
phpt610030pk.pdf

PHPT610035PK
PHPT610035PK

PHPT610030PKPNP/PNP high power double bipolar transistor22 October 2014 Product data sheet1. General descriptionPNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.NPN/NPN complement: PHPT610030NK.NPN/PNP complement: PHPT610030NPK.2. Features and benefits High thermal power dissipation capability Suita

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History: MMBTA05-AU | CSC2238AY | CSC3936 | 2N2446 | 2N1618

 

 
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