PMD20K200 Todos los transistores

 ..1. Size:113K  njs
 pmd20k200.pdf

 9.1. Size:174K  nxp
 pmd2001d.pdf

PMD2001D MOSFET driver Rev. 02 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features Switching transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layo

 9.2. Size:376K  willsemi
 wpmd2013.pdf

WPMD2013 WPMD2013 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V -20 0.860@ VGS=-1.8V SOT-563 Descriptions D1 G2 S2 6 5 4 The WPMD2013 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

 9.3. Size:825K  willsemi
 wpmd2012.pdf

WPMD2012 WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V -20 0.910@ VGS=-1.8V SOT-363 Descriptions D1 G2 S2 6 5 4 The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

 9.4. Size:194K  willsemi
 wpmd2011.pdf

WPMD2011 WPMD2011 Dual P-Channel -20V, -4.4A, 52m Power MOSFET Http //www.willsemi.com Rds(on) V(BR)DSS ( ) 0.052 @ -4.5V 0.064 @ -2.5V -20 0.080 @ -1.8V DFN2x2-6L 0.090 @ -1.5V Description D1 The WPMD2011 is P-Channel enhancement dual S1 D1 1 6 MOS Field Effect Transistor. Uses advanced trench G2 technology and design to provide excellent RDS(ON) with G1 2 5 low gat

 9.5. Size:817K  willsemi
 wpmd2008.pdf

WPMD2008 WPMD2008 Http //www.sh-willsemi.com 4 Dual P-Channel, -20 V, - .1A, Power MOSFET Description The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free. Features V R MAX (BR)DSS DS(on) 110m @ -4.5V -20 V 138m @ -2.5V PI

 9.6. Size:1132K  willsemi
 wpmd2010.pdf

WPMD2010 WPMD2010 Http //www.sh-willsemi.com Dual P-Channel, -20 V, -3.6A, Power MOSFET Description The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2010 is Pb-free. Features V(BR)DSS RDS(on) Typ 75m @ -4.5V -20 V 101m @ -

 9.7. Size:324K  magnachip
 mpmd200b120rh.pdf

MPM B120RH MD200B NPT & R d Type 1200V le N Rugged e V IGBT Modul General D on Descriptio Fea atures MagnaChip s IGBT Mod package dule 7DM-3 p BVCES= 1200V V Lo n Loss VCE(sa = 2.7V (typ.) ow Conduction at) devices are optimized to ses and o reduce loss ast & Soft Anti-Parallel FWD Fa D Sh ed Min. 10us hort circuit rate s at TC=100 switch