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PT236T30E2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PT236T30E2
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23-6L

 Búsqueda de reemplazo de transistor bipolar PT236T30E2

 

PT236T30E2 Datasheet (PDF)

 ..1. Size:156K  prisemi
pt236t30e2.pdf

PT236T30E2
PT236T30E2

PT236T30E2 Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow tem

 0.1. Size:123K  prisemi
pt236t30e2h.pdf

PT236T30E2
PT236T30E2

PT236T30E2H Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3.5A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualifi

 0.2. Size:122K  prisemi
pt236t30e2m.pdf

PT236T30E2
PT236T30E2

PT236T30E2M Transistor Feature 61This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Very low collector to emitter saturation voltage 52 DC current gain >100 3A continuous collector current 4 PNP epitaxial planar silicon transistor 3Mechanical Characteristics Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified

 9.1. Size:322K  central
cmpt2369.pdf

PT236T30E2
PT236T30E2

CMPT2369www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching applications. MARKING CODE: C1JSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC2379

 

 
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History: 2SC2379

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