2N1716S Todos los transistores

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 2n1716s.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MIL S 19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.1. Size:623K  rca
 2n1711.pdf

 9.2. Size:51K  philips
 2n1711 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emit

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 2n1711.pdf

2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Va

 9.4. Size:47K  st
 2n1711 .pdf

2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Va

 9.5. Size:64K  central
 2n1613 2n1711 2n1893.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

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 2n1715s.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MIL S 19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

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 2n1714s.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MIL S 19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.8. Size:318K  no
 2n1717s.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MIL S 19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.9. Size:127K  bocasemi
 2n956 2n718a 2n1711.pdf

http //www.bocasemi.com Boca Semiconductor Corp. BSC http //www.bocasemi.com

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 2n1711.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage, RBE

 9.11. Size:92K  microelectronics
 2n1613 2n1711.pdf