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2N1716S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N1716S
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.75 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO39
 

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2N1716S Datasheet (PDF)

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2N1716S

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

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2N1716S

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2N1716S

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1711NPN medium power transistor1997 May 28Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1711FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emit

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2N1716S

2N1711EPITAXIAL PLANAR NPNDESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintented for use in high performance amplifier,oscillator and switching circuits.The 2N1711 is also used to advantage inamplifiers where low noise is an important factor.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Va

MOSTRAR MÁS

Otros transistores... PT9734 , PT9790 , 2N1131L , 2N1132CSM , 2N1132DCSM , 2N1132L , 2N1714S , 2N1715S , BC546 , 2N1717S , 2N1893X , 2N2060ADCSM , 2N2060L , 2N2060M , 2N2218AL , 2N2218AX , 2N2218X .

History: HEPS0035

 

 
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