2N2432AUB Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2432AUB

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 18 V

Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: LCC

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2N2432AUB datasheet

 ..1. Size:211K  microsemi
 2n2432aub.pdf pdf_icon

2N2432AUB

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 DEVICES LEVELS 2N2432 2N2432UB JAN 2N2432A 2N2432AUB JANTX JANTXV AB

 8.1. Size:11K  semelab
 2n2432.pdf pdf_icon

2N2432AUB

2N2432 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN

 8.2. Size:211K  microsemi
 2n2432ub.pdf pdf_icon

2N2432AUB

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 DEVICES LEVELS 2N2432 2N2432UB JAN 2N2432A 2N2432AUB JANTX JANTXV AB

Otros transistores... 2N2222AC3B, 2N2222AC3C, 2N2222AHR, 2N2222AUBC, 2N2270AL, 2N2411X, 2N2412BX, 2N2412X, D209L, 2N2432UB, 2N2484UA, 2N2484UBC, 2N2604UB, 2N2696CSM, 2N2857C1, 2N2857C1A, 2N2857C1B