2N2894ADCSM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N2894ADCSM
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 12 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 4.5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 800 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: LCC2

Búsqueda de reemplazo de transistor bipolar 2N2894ADCSM

2N2894ADCSM Datasheet (PDF)

..1. Size:33K semelab
2n2894adcsm.pdf

2N2894ADCSMDUAL HIGH SPEED, MEDIUM POWERPNP GENERAL PURPOSE TRANSISTORIN A HERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FEATURES SILICON PLANAR EPITAXIAL DUAL PNP2.29 0.20 1.65 0.13 1.40 0.15(0.09 0.008) (0.065 0.005) (0.055 0.006)TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT2 3PACKAGE 1 4 CECC SCR

7.1. Size:10K semelab
2n2894a.pdf

2N2894ADimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019)0.41 (0.016)dia.IC = 0.2A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

7.2. Size:274K semelab
2n2894ac1a.pdf

HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Silicon Planar Epitaxial PNP Transistor High Speed low Saturation Switching Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -12V VCEO Collecto

7.3. Size:274K semelab
2n2894ac1b.pdf