2N2907AC3A Todos los transistores

 ..1. Size:200K  semelab
 2n2907ac3a.pdf

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 5.1. Size:200K  semelab
 2n2907ac3b.pdf

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 5.2. Size:200K  semelab
 2n2907ac3c.pdf

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 6.1. Size:22K  semelab
 2n2907acsmcecc.pdf

2N2907ACSM SEME LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 0.10 SILICON PLANAR EPITAXIAL PNP (0.02 0.004) 0.31 rad. (0.012) TRANSISTOR 3 HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 CE

 6.2. Size:563K  semelab
 2n2907ac1a.pdf

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 6.3. Size:563K  semelab
 2n2907ac1b.pdf

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 6.4. Size:144K  semelab
 2n2907acsm4r.pdf

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter V

 6.5. Size:10K  semelab
 2n2907acecc.pdf

2N2907ACECC Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX