2N2907AC3A Todos los transistores

 

2N2907AC3A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N2907AC3A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: LCC1

 Búsqueda de reemplazo de transistor bipolar 2N2907AC3A

 

2N2907AC3A Datasheet (PDF)

 ..1. Size:200K  semelab
 2n2907ac3a.pdf

2N2907AC3A 2N2907AC3A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 5.1. Size:200K  semelab
 2n2907ac3b.pdf

2N2907AC3A 2N2907AC3A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 5.2. Size:200K  semelab
 2n2907ac3c.pdf

2N2907AC3A 2N2907AC3A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 6.1. Size:22K  semelab
 2n2907acsmcecc.pdf

2N2907AC3A 2N2907AC3A

2N2907ACSMSEMELABHIGH SPEED, MEDIUM POWER, PNPSWITCHING TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES0.51 0.10 SILICON PLANAR EPITAXIAL PNP (0.02 0.004) 0.31rad.(0.012)TRANSISTOR3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CE

 6.2. Size:563K  semelab
 2n2907ac1a.pdf

2N2907AC3A 2N2907AC3A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 6.3. Size:563K  semelab
 2n2907ac1b.pdf

2N2907AC3A 2N2907AC3A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

 6.4. Size:144K  semelab
 2n2907acsm4r.pdf

2N2907AC3A 2N2907AC3A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter V

 6.5. Size:10K  semelab
 2n2907acecc.pdf

2N2907AC3A

2N2907ACECCDimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019)0.41 (0.016)dia.IC = 0.6A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX

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History: AL100-5 | TN6705A | 2N2919

 

 
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