2N2907AUA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AUA Low Power, High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage -60V VCEO Collector Emitter Volt

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS qua

Product Bulletin JANTX, JANTXV, 2N2907AUBSeptember 1996Surface Mount PNP General Purpose TransistorType JANTX, JANTXV, 2N2907AUBFeatures Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 VCeramic surface mount packageCollector-Emitter Voltage. . . . . .

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM 3K Rads (Si) 2N2906A 2N2907AJANSD 10K Rads (Si) 2N2906AL 2N2907ALJANSP 30K Rads (Si) 2N2906AUA 2N2907AUAJANS

SEMICONDUCTOR2N2907AUTECHNICAL DATAGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifier3applications. They are housed in the SC-323/SC-70 package whichis designed for low power surface mount applications.1Features2compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING IN