2N3055AG
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3055AG
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 115
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.8
MHz
Capacitancia de salida (Cc): 60
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2N3055AG
2N3055AG
Datasheet (PDF)
..1. Size:89K onsemi
2n3055ag.pdf
2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc
..2. Size:181K onsemi
2n3055ag mj15015g mj15016g.pdf
2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert
7.1. Size:235K motorola
2n3055a mj2955a mj15015 mj15016.pdf
Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed for high power audio, steppingmotor and other linear applications. These devices can also be used in powerswitching circuits such as relay or solenoid drivers, dctodc converters, inverters
7.2. Size:89K onsemi
2n3055a mj15015 mj15016.pdf
2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc
7.4. Size:33K inchange semiconductor
2n3055a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJ2955A APPLICATIONS Designed for high power audio, stepping motor and other linear applications. It can also be
Otros transistores... 2N3192
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