2N3421ASMD05 Todos los transistores

 

2N3421ASMD05 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N3421ASMD05
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 5 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO276AA

 Búsqueda de reemplazo de transistor bipolar 2N3421ASMD05

 

2N3421ASMD05 Datasheet (PDF)

 ..1. Size:10K  semelab
2n3421asmd05.pdf

2N3421ASMD05

2N3421ASMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

 4.1. Size:10K  semelab
2n3421asmd.pdf

2N3421ASMD05

2N3421ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

 8.1. Size:10K  semelab
2n3421smd05.pdf

2N3421ASMD05

2N3421SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

 8.2. Size:10K  semelab
2n3421smd.pdf

2N3421ASMD05

2N3421SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

 8.3. Size:63K  microsemi
2n3421.pdf

2N3421ASMD05
2N3421ASMD05

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3421APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 125V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 125JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power D

 8.4. Size:167K  aeroflex
2n3418 2n3419 2n3420 2n3421.pdf

2N3421ASMD05
2N3421ASMD05

NPN Meduim Power Silicon Transistor2N3418, 2N3419, 2N3420 & 2N34212N3418S, 2N3419S, 2N3420S & 2N3421SFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/393 TO-5, TO-39 (TO-205AD) PackageMaximum Ratings 2N3418, S 2N3419, SRatings Symbol 2N3420, S 2N3421, S UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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