2N3440UA Todos los transistores

 

2N3440UA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N3440UA
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: LCC2

 Búsqueda de reemplazo de transistor bipolar 2N3440UA

 

2N3440UA Datasheet (PDF)

 ..1. Size:190K  microsemi
2n3440ua.pdf

2N3440UA
2N3440UA

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS JAN 2N3439 * 2N3440JANTX 2N3439L * 2N3440LJANTXV

 8.1. Size:47K  st
2n3439 2n3440.pdf

2N3440UA
2N3440UA

2N34392N3440SILICON NPN TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN TRANSISTORDESCRIPTION The 2N3439 and 2N3440 are silicon epitaxialplanar NPN transistors in jedec TO-39 metal casedesigned for use in consumer and industrialline-operated applications. These devices are particularly suited as drivers inhigh-voltage low current inverters, switching andseri

 8.2. Size:94K  semelab
2n3440c3c.pdf

2N3440UA
2N3440UA

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

 8.3. Size:94K  semelab
2n3440c3a.pdf

2N3440UA
2N3440UA

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

 8.4. Size:94K  semelab
2n3440c3b.pdf

2N3440UA
2N3440UA

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

 8.5. Size:94K  semelab
2n3440csm4r.pdf

2N3440UA
2N3440UA

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R High Voltage Hermetic Ceramic Surface Mount Package. Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) 2N3439 2N3440Symbols Parame

 8.6. Size:21K  semelab
2n3440dcsm.pdf

2N3440UA
2N3440UA

2N3439DCSM2N3440DCSMHIGH VOLTAGE, MEDIUM POWER, NPNDUAL TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES2.29 0.20 1.65 0.13 1.40 0.15(0.055 0.006)(0.09 0.008) (0.065 0.005) DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR2 3 HERMETIC CERAMIC SURFACE

 8.7. Size:272K  microsemi
2n3439 2n3440.pdf

2N3440UA
2N3440UA

2N3439 thru 2N3440 Qualified Levels: NPN LOW POWER SILICON JAN, JANTX, Available on TRANSISTOR JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi also offers nume

 8.8. Size:212K  inchange semiconductor
2n3440.pdf

2N3440UA
2N3440UA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3440DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 250 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 20mAFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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