2N3714SMD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3714SMD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 10 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO276AB
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2N3714SMD Datasheet (PDF)
2n3714smd.pdf

2N3714SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (
2n3713 2n3714 2n3715 2n3716.pdf

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2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf

2N3713/2N3714/2N3715/2N3716 - NPN2N3789/2N3790/2N3791/2N3792 - PNPEPITAXIAL-BASE NPN - PNPThe 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPNpower transistor in Jedec TO-3 metal case. They are inteded for use in powerlinear and switching applications. The complementary PNPtypes are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.ABSOLUTE MAXIMUM RATINGSSymbol Rat
2n3714.pdf

isc Silicon NPN Power Transistor 2N3714DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for medium-speed switching andamplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: PBSS5240Y | 2SC3819 | PH1214-300M | PET2002
History: PBSS5240Y | 2SC3819 | PH1214-300M | PET2002



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