2N3866UB Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3866UB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 3.5 V

Corriente del colector DC máxima (Ic): 0.4 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 350 MHz

Capacitancia de salida (Cc): 3.5 pF

Ganancia de corriente contínua (hFE): 15

Encapsulados: UB

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2N3866UB datasheet

 ..1. Size:136K  microsemi
 2n3866ub.pdf pdf_icon

2N3866UB

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN SILICON HIGH-FREQUENCY TRANSISTOR Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866UB JAN 2N3866A 2N3866AUB JANTX JANTX

 8.1. Size:45K  philips
 2n3866 2n4427.pdf pdf_icon

2N3866UB

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27 Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3866; 2N4427 overlay transistors DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages wi

 8.2. Size:522K  central
 2n3866 series.pdf pdf_icon

2N3866UB

2N3866 2N3866A www.centralsemi.com NPN SILICON DESCRIPTION HIGH FREQUENCY TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SYMBOL UNITS Collec

 8.3. Size:331K  microsemi
 2n3866.pdf pdf_icon

2N3866UB

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 1. Emitter 800 MHz Current-Gain Bandwidth Produ

MOSTRAR MÁS

Otros transistores... 2N3791SMD, 2N3792SMD, 2N3804ADCSM, 2N3810HR, 2N3810L, 2N3810U, 2N3811L, 2N3811U, 2N2222, 2N3867S, 2N3867SMD05, 2N3867U4, 2N3868S, 2N3868SMD, 2N3868SMD05, 2N3868U4, 2N3879SMD