2N3866UB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN SILICON HIGH-FREQUENCY TRANSISTOR Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866UB JAN2N3866A 2N3866AUB JANTXJANTX

DISCRETE SEMICONDUCTORSDATA SHEET2N3866; 2N4427Silicon planar epitaxialoverlay transistors1995 Oct 27Product specificationSupersedes data of August 1986File under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationSilicon planar epitaxial2N3866; 2N4427overlay transistorsDESCRIPTION APPLICATIONSNPN overlay transistors in TO-39 metal packages wi

2N38662N3866Awww.centralsemi.comNPN SILICONDESCRIPTION:HIGH FREQUENCY TRANSISTORThe CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.MARKING: FULL PART NUMBERTO-39 CASEMAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITSCollec

140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-98552N3866 / 2N3866ARF & MICROWAVE DISCRETELOW POWER TRANSISTORSFeatures Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45%1. Emitter 800 MHz Current-Gain Bandwidth Produ

3DA3866(2N3866) NPN PCM Ta=25 5 W ICM 0.4 A Tjm 175 Tstg -55~150 V(BR)CBO IC=0.1mA 55 V V(BR)CEO IC=5.0mA 30 V V(BR)EBO IE=0.1mA 3.5 V ICEO VCE=28V 20 A IC=100mA VCEsat 1 V IB=20mA VCE=5V hFE 25 IC=50m A VCE=15V