2N3867SMD05 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PNP SWITCHING SILICON TRANSISTOR 2N3867SMD05 High Voltage Hermetic Ceramic Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 40V VCEO Collector Emitter Voltage 40V VEBO Emitter

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can PackageDesigned for High Speed, Medium Current Switching and High Frequency Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 40 VVCBOCollector Base Voltage 40 VVEBO

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3867APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency AmplifiersFEATURES:Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 40 Vdc (Min)Transistors DC Current Gain: hFE = 40-200 @ IC = 1.5 Adc Low Collector-