2N3906-G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

General Purpose Transistor2N3906-G (PNP)RoHS DeviceTO-92Features -PNP silicon epitaxial planar transistor for 0.185(4.70)switching and amplifier application.0.173(4.40) -As complementary type, the NPN transistor 0.135 (3.43) Min.0.055 (1.14)0.020(0.51)0.043(1. 10) 2N3904-G is recommended. 0.014(0.36) 0.022(0.55)0.015(0.38) -This transistor is available in the S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N3905/DGeneral Purpose Transistors2N3905PNP Silicon*2N3906*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER12MAXIMUM RATINGS3Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 40 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 40 VdcEmitterBase Voltage

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N3906PNP switching transistor1999 Apr 23Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationPNP switching transistor 2N3906FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter High-spe

2N3906SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / Shipment2N3906 2N3906 TO-92 / Bulk2N3906-AP 2N3906 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS2N3904TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT

October 20112N3906 / MMBT3906 / PZT3906PNP General Purpose AmplifierFeatures This device is designed for general purpose amplifier and switching applications at collector currents of 10A to 100 mA.2N3906 PZT3906MMBT3906CCEECBTO-92 SOT-23 SOT-223BMark:2AEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Col

2N3906 MMBT3906 PZT3906CCEECC TO-92BBBESOT-223SOT-23Mark: 2APNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchingapplications at collector currents of 10 A to 100 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -40 VVCBO Collector-Base Vol

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MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2N3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Ampl

2N3906Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information) Purpose AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55

2N3906General PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR Pb-Free Packages are Available*32BASEMAXIMUM RATINGSRating Symbol Value Unit1EMITTERCollector - Emitter Voltage VCEO 40 VdcCollector - Base Voltage VCBO 40 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO-92CASE 29Total Device Dissipation @

2N3906 / MMBT3906 / PZT3906PNP General-Purpose AmplifierDescriptionThis device is designed for general-purpose amplifierand switching applications at collector currents of 10 mAto 100 mA.2N3906 PZT3906MMBT3906CCEECBTO-92 SOT-23 SOT-223BMark:2AEBCOrdering InformationPart Number Marking Package Packing Method Pack Quantity2N3906BU 2N3906 TO-92 3L Bulk 10000

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2N3906G-AB3-R SOT-89 B C E Tape Reel2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box2N3906

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc(MAX)=625mW 1* Complementary to UTC 2N3904 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box

2N3906NSemiconductor Semiconductor PNP Silicon TransistorDescriptions General small signal application Switching application Features Low collector-emitter saturation voltage : 0.4V (Max.) @ IC=-50mA, IB=-5mA Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz Complementary pair with 2N3904N Ordering Information Type NO. Marki

2N3906SemiconductorSemiconductorPNP Silicon TransistorDescriptions General small signal application Switching applicationFeatures Low collector saturation voltage Collector output capacitance Complementary pair with 2N3904Ordering InformationType NO. Marking Package Code2N3906 2N3906 T0-92Outline Dimensions unit : mm3.450.14.50.12.250

2N3906 -0.2A , -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25C) AD Collector Current ICM: -200mA Collector Base Voltage V(BR)CBO: -40V BCLASSIFICATION OF hFE E CFProduct-Rank 2N3906-O 2N3906-YRange 100~

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

SEMICONDUCTOR 2N3906ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBDIM MILLIMETERSFEATURES_+A 1.60 0.10DLow Leakage Current _+2 B 0.85 0.10_+C 0.70 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.27+0.10/-0.05_@VCE=-30V, VEB=-3V. E 1.60 0.10+_+1.00 0.10GExcellent DC Current Gain Linearity.

SEMICONDUCTOR 2N3906CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V(

SEMICONDUCTOR 2N3906UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2Low Leakage Current _+B 1.25 0.15_+C 0.90 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.3+0.10/-0.05_E +2.10 0.20@VCE=-30V, VEB=-3V.G 0.65Excellent DC Current Gain Linearity.H 0.

SEMICONDUCTOR 2N3906TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V(M

SEMICONDUCTOR 2N3906VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBFEATURESLow Leakage CurrentDIM MILLIMETERS2_: ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05_B 0.8 +0.05@VCE=-30V, VEB=-3V. 13_C 0.5 + 0.05_D 0.3 + 0.05Excellent DC Current Gain Linearity._E 1.2 + 0.05Low Saturation Voltage _G 0.8

SEMICONDUCTOR 2N3906STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERS_+FEATURES A 2.93 0.20B 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX23 D 0.40+0.15/-0.05: ICEX=-50nA(Max.), IBL=-50nA(Max.)E 2.40+0.30/-0.201G 1.90@VCE=-30V, VEB=-3V.H 0.95Excellent DC Current Gain Linearity.J 0

SEMICONDUCTOR 2N3906ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDLow Saturation Voltage D 0.45E 1.00: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.F 1.27G 0.85Low Collect

SEMICONDUCTOR 2N3906SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESLow Leakage Current: ICEX=-50nA(Max.), IBL=-50nA(Max.)@VCE=-30V, VEB=-3V.Excellent DC Current Gain Linearity.Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.Complementary to 2N3904SC.MAXIMUM RATING (Ta=25)CHARACTERIST

2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25 unless otherwise note

2N3906PNP General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC-200 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, T

Spec. No. : HE6240HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2005.01.14MICROELECTRONICS CORP.Page No. : 1/5H2N3906PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N3906 is designed for general purpose switching and amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......................................................

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

2N3906 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features Low current, Low voltage. / Applications General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1

2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors 2N3903 and 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol

SEMICONDUCTOR2N3906ETECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONShippingDevice Marking22N3906E 2A 3000/Tape & Reel 1SC 89MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 4

SEMICONDUCTOR2N3906TECHNICAL DATA FEATURE TO-92 PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitt

SEMICONDUCTOR2N3906UTECHNICAL DATAGeneral Purpose Transistors PNP Silicon FEATURESWe declare that the material of product compliant withRoHS requirements and Halogen Free. DEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping 2N3906U 2A 3000/Tape&Reel12SC-70 / SOT 323 MAXIMUM RATINGS(Ta = 25)Parameter Symbol Limits UnitCollectorEmitte

SEMICONDUCTOR2N3906STECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONDevice Marking Shipping22N3906S 2A 3000/Tape & Reel 1SOT23MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 40

2N3906 / DescriptionsTO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features / ApplicationsLow current, Low voltage.General purpose amplifier. / Equivalent Circuit / Pinning123PIN1Collector PIN 2Base PIN 3Emitter

2N3906PNP / Descriptions / Pinning TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. PIN1Collector PIN 2Base / Features PIN 3Emitter 123 Low current, Low voltage. / Equivalent Circuit / Applications

Plastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES Compliment to 2N3904U Low current Low voltageMARKING: 2AMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -6 VIC Collector Current -Continuous -0.2 APC Collector Power Dissipation 0.5 WTh

isc Silicon PNP Power Transistor 2N3906DESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )NPN complement to Type 2N3904.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

isc Silicon PNP Power Transistor 2N3906SDESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )APPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -40 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuo