2N4150S Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4150S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 350 MHz
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO39
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2N4150S datasheet
2n4150s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS JAN 2N4150 2N5237 2N5238 JANTX 2N4150S 2N5237S 2N5238S JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N4150 2N5237 2N5238
2n4150u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS JAN 2N4150 2N5237 2N5238 JANTX 2N4150S 2N5237S 2N5238S JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N4150 2N5237 2N5238
2n4150 2n5237 2n5238.pdf
NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 TO-5 Package Maximum Ratings Ratings Symbol 2N4150 2N5237 2N5238 Units Collector - Emitter Voltage VCEO 70 120 170 Vdc Collector - Base Voltage VCBO 100 150 200 Vdc Emitter - Base Voltage VEBO 10.0 Vdc Collector Current IC 4.0 Adc Total Power Dissipation @
Otros transistores... 2N3997SMD , 2N3997SMD05 , 2N3998SMD , 2N3998SMD05 , 2N3999SMD , 2N3999SMD05 , 2N4033UB , 2N4124G , A733 , 2N4209C1A , 2N4209C1B , 2N4236X , 2N4261UBC , 2N4401G , 2N4401L , 2N4401SC , 2N4403G .
History: 2SC3356B
History: 2SC3356B
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