2N4261UBC Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4261UBC
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 4.5 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: UBC
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2N4261UBC datasheet
2n4261ubc.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN 2N4261UBC * JANTX JANTXV * Avail
2n4261.pdf
Data Sheet No. 2N4261 Generic Part Number Type 2N4261 2N4261 Geometry 0014 Polarity PNP REF MIL-PRF-19500/511 Qual Level JAN - JANS Features Fast switching small signal silicon transistor. Housed in a TO-72 case. Also available in chip form using the 0014 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/511 which Semicoa meets in all cases.
2n4264.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistor NPN Silicon 2N4264 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 15 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector Current Cont
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