2N4901SMD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N4901SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 40V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

PNP SILICON TRANSISTORS, PNP SILICON TRANSISTORS, EPITAXIAL BASE EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit2N4901 -40 VCBO Collector to Base Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCEO #Collector-Emitter Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCER Collector-Emitter Voltage 2

AAAA

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067,2N5068,2N5069 Low collector-emitter saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) an

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067/5068/5069 Low collector saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Coll