2N5152A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5152A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-emisor (Vce): 80 V

Corriente del colector DC máxima (Ic): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO39

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2N5152A datasheet

 ..1. Size:11K  semelab
 2n5152a.pdf pdf_icon

2N5152A

2N5152A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

 8.1. Size:78K  central
 2n5151 2n5152 2n5153 2n5154.pdf pdf_icon

2N5152A

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 8.2. Size:24K  semelab
 2n5152 2n5154.pdf pdf_icon

2N5152A

2N5152 2N5154 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec

 8.3. Size:10K  semelab
 2n5152smd.pdf pdf_icon

2N5152A

2N5152SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

MOSTRAR MÁS

Otros transistores... 2N5087G, 2N5087RLRAG, 2N5088G, 2N5089G, 2N5151-220M, 2N5151SMD05, 2N5151U3, 2N5151XSMD05, 2N2907, 2N5152SMD, 2N5152SMD05, 2N5152U3, 2N5153HR, 2N5153SMD, 2N5153SMD05, 2N5153U3, 2N5154HR