2N5154N1B
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5154N1B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5.5
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 24
MHz
Capacitancia de salida (Cc): 250
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO-276AA
Búsqueda de reemplazo de transistor bipolar 2N5154N1B
2N5154N1B
Datasheet (PDF)
..1. Size:336K semelab
2n5154n1b.pdf 
SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B Hermetic Ceramic Surface Mount SMD0.5 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curr
7.1. Size:279K semelab
2n5154n2a.pdf
SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A Hermetic Ceramic Surface Mount SMD1 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curren
8.1. Size:612K st
2n5154hr.pdf
2N5154HRHi-Rel NPN bipolar transistor 80 V - 5 ADatasheet - production dataFeaturesBVCEO 80 V13 IC (max) 5 A2HFE at 10 V - 150 mA > 70TO-39TO-257Operating temperature range - 65 C to + 200 C213 Hi-Rel NPN bipolar transistor Linear gain characteristicsSMD.5 ESCC qualified European preferred part list - EPPLFigure 1. Internal schematic diagr
8.3. Size:26K semelab
2n5154smd05.pdf
2N5152SMD052N5154SMD05MECHANICAL DATANPN BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5152SMD05 and the 2N5154SMD05 aresilicon expitaxial planar NPN transistors in aCeramic S
8.4. Size:779K semelab
2n5154x-220m.pdf
SILICON NPN POWER TRANSISTOR 2N5154X-220M Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base
8.5. Size:111K semelab
2n5154t2a.pdf
SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A Hermetic Metal TO39 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Current 2A ICM Pea
8.6. Size:17K semelab
2n5154xx.pdf
2N5154XXMECHANICAL DATADimensions in mm (inches)8.51 (0.34)9.40 (0.37)7.75 (0.305)8.51 (0.335)HIGH SPEED 6.10 (0.240)6.60 (0.260)MEDIUM VOLTAGESWITCH0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.5.08 (0.200)typ.2.542(0.100)1 3DESCRIPTION0.74 (0.029)1.14 (0.045)0.71 (0.028)0.86 (0.034) The 2N5154XX is a silicon expitaxial
8.7. Size:10K semelab
2n5154x.pdf
2N5154XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
8.8. Size:24K semelab
2n5152 2n5154.pdf
2N51522N5154MECHANICAL DATADimensions in mm (inches)HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec
8.9. Size:17K semelab
2n5154xsmd05.pdf
2N5154XSMD05MECHANICAL DATADimensions in mm (inches)HIGH SPEED 7.54 (0.296)0.76 (0.030)MEDIUM VOLTAGEmin.3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max.SWITCH 0.127 (0.005)1 32DESCRIPTION 0.127 (0.005)The 2N5154XSMD05 is a silicon expitaxial16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)planar NPN transistors in a Ceramic Surfacemax.7.26 (0.286) Mount
8.10. Size:19K semelab
2n5154xsmd.pdf
2N5154XSMDMECHANICAL DATADimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCH DESCRIPTIONThe 2N5154XSMD is a silicon expitaxialplanar NPN transistors in a Ceramic SurfaceMount Package for use in Switching and Linear applications.
8.11. Size:46K microsemi
2n5154u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154JANTX 2N5152L 2N5154LJANTXV 2N5152U3 2N5154U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test
8.12. Size:229K aeroflex
2n5152 2n5152l 2n5154 2n5154l.pdf
NPN Power Silicon Transistor2N5152, 2N5152L & 2N5154, 2N5154LFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/544 TO-5 Package: 2N5152L, 2N5154LTO-39 (TO-205AD) Package: 2N5152, 2N5154Maximum Ratings (TC = +25C unless otherwise noted)Ratings Symbol Value UnitsCollector - Emitter Voltage VCEO 80 VdcCollector - Base V
Otros transistores... 2SA1803O
, 2SA1803R
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, 2SA1805O
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