2N5416UA Datasheet. Equivalente

 ..1. Size:934K  no
 2n5416ua.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

 7.1. Size:934K  no
 2n5416u4.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

 8.1. Size:51K  philips
 2n5415 2n5416 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors 1997 May 21 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION High voltage (m

 8.2. Size:51K  philips
 2n5415 2n5416.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors 1997 May 21 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION High voltage (m

 8.3. Size:45K  st
 2n5415 2n5416.pdf

2N5415 2N5416 SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching

 8.4. Size:47K  st
 2n5415 2n5416 .pdf

2N5415 2N5416 SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching

 8.5. Size:64K  central
 2n5415 2n5416 2.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 8.6. Size:934K  no
 2n5416s.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

 8.7. Size:140K  cdil
 2n5415 2n5416.pdf

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N5415 2N5416 UNITS VCEO Collector Emitter Voltage

 8.8. Size:111K  china
 3ca5416 2n5416.pdf

3CA5416(2N5416) PNP PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 350 V V(BR)CEO ICE=0.1mA 300 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=280V 50 A ICEO VEB=150V 50 A IEBO VEB=6V 20 A IC=0.05A VCEsat 2.5 V IB=0.