2N5657G Datasheet. Equivalente

 ..1. Size:80K  onsemi
 2n5657g.pdf

2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain - NPN SILICON hFE = 30-250 @ IC = 100 mAdc 250-350 VOLTS, 20 WATTS Current

 ..2. Size:175K  onsemi
 2n5655g 2n5657g.pdf

2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT

 8.1. Size:176K  motorola
 2n5655-57 2n5655 2n5656 2n5657.pdf

Order this document MOTOROLA by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 Plastic NPN Silicon 2N5657 High-Voltage Power Transistor . . . designed for use in line operated equipment such as audio output amplifiers; low current, high voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS Excellent DC Current Gain hFE = 30 250 @ IC = 100 mAdc NP

 8.2. Size:497K  st
 2n5657.pdf

2N5657 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un

 8.3. Size:80K  onsemi
 2n5655 2n5657.pdf

2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain - NPN SILICON hFE = 30-250 @ IC = 100 mAdc 250-350 VOLTS, 20 WATTS Current

 8.4. Size:121K  jmnic
 2n5655 2n5656 2n5657.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas

 8.5. Size:53K  inchange semiconductor
 2n5657.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5657 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 350V(Min) DC Current Gain- hFE= 30-250@IC= 0.1A Low Saturation Voltage APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC

 8.6. Size:117K  inchange semiconductor
 2n5655 2n5656 2n5657.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting bas