2N5667S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5667S 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 20 MHz
Capacitancia de salida (Cc): 120 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO39
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2N5667S datasheet
..1. Size:116K microsemi
2n5667s.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN 2N5665 2N5666S 2N5667S JANTX 2N5666U3 JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N5664 2N5
8.1. Size:341K semelab
2n5667n1.pdf
NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont
9.1. Size:341K semelab
2n5665n1.pdf
NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont
9.2. Size:10K semelab
2n5665smd.pdf
2N5665SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (
9.3. Size:10K semelab
2n5664smd05.pdf
2N5664SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 3A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her
9.4. Size:10K semelab
2n5666smd05.pdf
2N5666SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 3A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her
9.5. Size:10K semelab
2n5666smd.pdf
2N5666SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (
9.6. Size:17K semelab
2n5664smd.pdf
2N5664SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS FEATURES ! HIGH VOLTAGE FAST SWITCHING CERAMIC SURFACE MOUNT PACKAGE SCREENING OPTIONS AVAILABLE
9.7. Size:116K microsemi
2n5666u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN 2N5665 2N5666S 2N5667S JANTX 2N5666U3 JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N5664 2N5
9.8. Size:116K microsemi
2n5666s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN 2N5665 2N5666S 2N5667S JANTX 2N5666U3 JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N5664 2N5
9.9. Size:275K microsemi
2n5661u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN 2N5660U3 2N5661U3 2N5663 JANTX JANT
9.10. Size:59K microsemi
2n5660 2n5661 2n5662 2n5663.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices Qualified Level JAN, JANTX 2N5660 2N5661 2N5662 2N5663 JANTXV MAXIMUM RATINGS 2N5660 2N5661 Ratings Symbol Unit 2N5662 2N5663 Collector-Emitter Voltage 200 300 Vdc VCEO Collector-Base Voltage 250 400 Vdc VCBO Collector-Emitter Voltage 250 400 Vdc VCER Emitter-Base Voltage 6.0
9.11. Size:60K microsemi
2n5664-65-66-67.pdf
TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices Qualified Level Devices Qualified Level JAN JAN 2N5666 2N5667 JANTX 2N5664 2N5665 JANTX 2N5666S 2N5667S JANTXV JANTXV JANS MAXIMUM RATINGS 2N5664 2N5665 Ratings Symbol 2N5666, S 2N5667, S Unit Collector-Emitter Voltage 200 300 Vdc VCEO TO-66* (TO-213AA) Collector-Ba
9.12. Size:275K microsemi
2n5660u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN 2N5660U3 2N5661U3 2N5663 JANTX JANT
9.13. Size:127K inchange semiconductor
2n5664 2n5665.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Em
9.14. Size:221K inchange semiconductor
2n5665.pdf
isc Silicon NPN Power Transistor 2N5665 DESCRIPTION Collector-Emitter Breakdown Voltage- V =300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 30
9.15. Size:127K inchange semiconductor
2n5660 2n5661.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5660 2N5661 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Em
9.16. Size:221K inchange semiconductor
2n5661.pdf
isc Silicon NPN Power Transistor 2N5661 DESCRIPTION Collector-Emitter Breakdown Voltage- V =300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 30
Otros transistores... 2N5664SMD05, 2N5665N1, 2N5665SMD, 2N5666S, 2N5666SMD, 2N5666SMD05, 2N5666U3, 2N5667N1, 2SC2625, 2N5681SMD05, 2N5682X, 2N5684G, 2N5686G, 2N5777, 2N5778, 2N5779, 2N5780
